Journal ArticleDOI
When group-III nitrides go infrared: New properties and perspectives
TLDR
In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.Abstract:
Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant materials for solid state lighting and lasing technologies and consequently, have been studied very well. Much less effort has been devoted to InN and In-rich InGaN alloys. A major breakthrough in 2002, stemming from much improved quality of InN films grown using molecular beam epitaxy, resulted in the bandgap of InN being revised from 1.9 eV to a much narrower value of 0.64 eV. This finding triggered a worldwide research thrust into the area of narrow-band-gap group-III nitrides. The low value of the InN bandgap provides a basis for a consistent description of the electronic structure of InGaN and InAlN alloys with all compositions. It extends the fundamental bandgap of the group III-nitride alloy system over a wider spectral region, ranging from the near infrared at ∼1.9 μm (0.64 eV for InN) to the ultraviolet at ∼0.36 μm (3.4 eV for GaN...read more
Citations
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Journal ArticleDOI
Non uniform distribution of indium in the InxGa1−xN/GaN quantum well is more advantageous for quantum well light emitting diodes
TL;DR: In this article, the impact of non-uniform distribution of indium (In) in the In x Ga 1-x N/GaN light emitting diodes as compared to the uniform distribution of In was investigated.
Proceedings ArticleDOI
Efficiency enhancement of InGaN/GaN multiple quantum well solar cells using CdS quantum dots and distributed Bragg reflectors
Yu Lin Tsai,Chien-Chung Lin,Hau-Vei Han,Hsin-Chu Chen,Kuo-Ju Chen,W.C. Lai,Jinn-Kong Sheu,Fang-I Lai,Peichen Yu,Hao-Chung Kuo +9 more
TL;DR: In this article, a hybrid design of InGaN/GaN multiple quantum wells (MQWs) solar cells combined with colloidal CdS quantum dots (QDs) and back side distributed Bragg reflectors (DBRs) has been demonstrated.
Proceedings ArticleDOI
Effect of III-Nitride polarization on photo-current in N-polar GaN/InGaN p-n
TL;DR: In this article, the impact of III-Nitride polarization on p-GaN/n-InGaN devices grown with N-polar orientations in photovoltaic properties is investigated.
Journal ArticleDOI
Optical properties of ultra-thin InN layer embedded in InGaN matrix for light emitters
TL;DR: In this article, the optical properties of an ultra-thin InN layer embedded in InGaN matrix for light emitters were theoretically investigated, and the peak emission wavelength extended from ultraviolet (374 nm) to green (536 nm) with InN quantum well thickness increasing from 1 monolayer to 2 monolayers.
Proceedings ArticleDOI
Study of Electron Drift Mobility in Nitrides Indium and Gallium
TL;DR: For indium and gallium nitrides, momentum scattering rates were calculated and analyzed for typical types of impurity and phonon mechanisms for the first time in this paper, where a weak-field temperature dependence of the electron drift mobility was calculated for a wide range of dopant concentrations.
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Journal ArticleDOI
Band structure of indium antimonide
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