Journal ArticleDOI
When group-III nitrides go infrared: New properties and perspectives
TLDR
In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.Abstract:
Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant materials for solid state lighting and lasing technologies and consequently, have been studied very well. Much less effort has been devoted to InN and In-rich InGaN alloys. A major breakthrough in 2002, stemming from much improved quality of InN films grown using molecular beam epitaxy, resulted in the bandgap of InN being revised from 1.9 eV to a much narrower value of 0.64 eV. This finding triggered a worldwide research thrust into the area of narrow-band-gap group-III nitrides. The low value of the InN bandgap provides a basis for a consistent description of the electronic structure of InGaN and InAlN alloys with all compositions. It extends the fundamental bandgap of the group III-nitride alloy system over a wider spectral region, ranging from the near infrared at ∼1.9 μm (0.64 eV for InN) to the ultraviolet at ∼0.36 μm (3.4 eV for GaN...read more
Citations
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Journal ArticleDOI
Selective growth of N-polar InN through an in situ AlN mask on a sapphire substrate
TL;DR: In this article, an InN epilayer grown at a temperature in this gap on a sapphire substrate covered with an ultrathin AlN layer has demonstrated N-polarity.
Journal ArticleDOI
Red-green luminescence in indium gallium nitride alloys investigated by high pressure optical spectroscopy
TL;DR: In this article, the authors performed optical absorption and photoluminescence experiments under high pressure up to 10 εGPa on two good quality InGaN epilayers with ∼40% indium.
Journal ArticleDOI
Excitation dependent Raman studies of self-seeded grown InN nanoparticles with different carrier concentration
TL;DR: Variation of the intensity of the B1(high) mode is correlated with a band filling effect, which is substantiated by the luminescence studies of the InN samples with different carrier concentrations, to understand the role of carrier density in the optical phonon structure.
Book ChapterDOI
Artificial Photosynthesis on III-Nitride Nanowire Arrays
TL;DR: In this article, the authors review the state-of-the-art research activities made on III-nitride nanowire arrays for artificial photosynthesis, with a focus on the design and development of efficient 3N materials (i.e., GaN and InGaN) for water splitting and CO 2 reduction via photocatalytic and photoelectrochemical approaches.
Journal ArticleDOI
Effects of ternary mixed crystal and size on intersubband optical absorption in wurtzite InGaN/GaN core–shell nanowires
TL;DR: In this article, the effects of ternary mixed crystal and size on intersubband optical absorption coefficients in In x Ga 1− x N/GaN core-shell nanowires (CSNWs) are investigated.
References
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Book
Introduction to solid state physics
TL;DR: In this paper, the Hartree-Fock Approximation of many-body techniques and the Electron Gas Polarons and Electron-phonon Interaction are discussed.
Journal ArticleDOI
Room-temperature ultraviolet nanowire nanolasers
Michael H. Huang,Samuel S. Mao,Henning Feick,Haoquan Yan,Yiying Wu,Hannes Kind,Eicke R. Weber,Richard E. Russo,Peidong Yang,Peidong Yang +9 more
TL;DR: Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated and self-organized, <0001> oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process.
Journal ArticleDOI
Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
Journal ArticleDOI
Introduction to Solid State Physics
TL;DR: Kind's new edition is to be welcomed as mentioned in this paper, with a revised format and attractive illustrations, and with the inclusion of much new material this book has become one of the best sources for undergraduate teaching, likely to give the student a wish to dig deeper into the solid state.
Journal ArticleDOI
Band structure of indium antimonide
TL;DR: The band structure of InSb is calculated using the k ·. p perturbation approach and assuming that the conduction and valence band extrema are at k = 0 as mentioned in this paper.