Journal ArticleDOI
When group-III nitrides go infrared: New properties and perspectives
TLDR
In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.Abstract:
Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant materials for solid state lighting and lasing technologies and consequently, have been studied very well. Much less effort has been devoted to InN and In-rich InGaN alloys. A major breakthrough in 2002, stemming from much improved quality of InN films grown using molecular beam epitaxy, resulted in the bandgap of InN being revised from 1.9 eV to a much narrower value of 0.64 eV. This finding triggered a worldwide research thrust into the area of narrow-band-gap group-III nitrides. The low value of the InN bandgap provides a basis for a consistent description of the electronic structure of InGaN and InAlN alloys with all compositions. It extends the fundamental bandgap of the group III-nitride alloy system over a wider spectral region, ranging from the near infrared at ∼1.9 μm (0.64 eV for InN) to the ultraviolet at ∼0.36 μm (3.4 eV for GaN...read more
Citations
More filters
Journal ArticleDOI
Solution–Liquid–Solid Approach to Colloidal Indium Nitride Nanoparticles from Simple Alkylamide Precursors
Journal ArticleDOI
Standard‐free composition measurements of Alx In1–xN by low‐loss electron energy loss spectroscopy
Justinas Palisaitis,Ching-Lien Hsiao,Muhammad Junaid,Mengyao Xie,Vanya Darakchieva,Jean-François Carlin,Nicolas Grandjean,Jens Birch,Lars Hultman,Per Persson +9 more
TL;DR: In this article, a standard-free method to retrieve compositional information in Alx In 1 −xN thin films by measuring the bulk plasmon energy (Ep), employing electron energy loss spectroscopy (EELS) in EELS was presented.
Journal ArticleDOI
Observation of phonon sideband emission in intrinsic InN nanowires: a photoluminescence and micro-Raman scattering study
TL;DR: The clearly resolved phonon sideband emission peak with a narrow linewidth suggests the superior quality of the presented InN nanowires, i.e., extremely low residual electron density and the absence of surface electron accumulation, which is consistent with the physical properties of intrinsic InNnanowires as in the previous studies.
Journal ArticleDOI
Assessment on Thermal Transport Properties of Group-III Nitrides: A Classical Molecular Dynamics Study with Transferable Tersoff Type Inter-atomic Potentials
TL;DR: In this paper, the thermal transport properties of hexagonal single-layer, zinc-blend and wurtzite phases of BN, AlN, and GaN crystals were investigated by means of classical molecular dynamics simulations.
Journal ArticleDOI
Correlations among morphology, composition, and photoelectrochemical water splitting properties of InGaN nanorods grown by molecular beam epitaxy.
TL;DR: The mechanism underlying the effect of growth condition on the morphology evolution of In GaN nanorods (NRs) has been systematically investigated and the InGaN NRs discussed here show a radial Stark effect induced by the pinned Fermi level.
References
More filters
Book
Introduction to solid state physics
TL;DR: In this paper, the Hartree-Fock Approximation of many-body techniques and the Electron Gas Polarons and Electron-phonon Interaction are discussed.
Journal ArticleDOI
Room-temperature ultraviolet nanowire nanolasers
Michael H. Huang,Samuel S. Mao,Henning Feick,Haoquan Yan,Yiying Wu,Hannes Kind,Eicke R. Weber,Richard E. Russo,Peidong Yang,Peidong Yang +9 more
TL;DR: Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated and self-organized, <0001> oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process.
Journal ArticleDOI
Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
Journal ArticleDOI
Introduction to Solid State Physics
TL;DR: Kind's new edition is to be welcomed as mentioned in this paper, with a revised format and attractive illustrations, and with the inclusion of much new material this book has become one of the best sources for undergraduate teaching, likely to give the student a wish to dig deeper into the solid state.
Journal ArticleDOI
Band structure of indium antimonide
TL;DR: The band structure of InSb is calculated using the k ·. p perturbation approach and assuming that the conduction and valence band extrema are at k = 0 as mentioned in this paper.