Journal ArticleDOI
When group-III nitrides go infrared: New properties and perspectives
TLDR
In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.Abstract:
Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant materials for solid state lighting and lasing technologies and consequently, have been studied very well. Much less effort has been devoted to InN and In-rich InGaN alloys. A major breakthrough in 2002, stemming from much improved quality of InN films grown using molecular beam epitaxy, resulted in the bandgap of InN being revised from 1.9 eV to a much narrower value of 0.64 eV. This finding triggered a worldwide research thrust into the area of narrow-band-gap group-III nitrides. The low value of the InN bandgap provides a basis for a consistent description of the electronic structure of InGaN and InAlN alloys with all compositions. It extends the fundamental bandgap of the group III-nitride alloy system over a wider spectral region, ranging from the near infrared at ∼1.9 μm (0.64 eV for InN) to the ultraviolet at ∼0.36 μm (3.4 eV for GaN...read more
Citations
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Journal ArticleDOI
Plasma-enhanced atomic-layer-deposited gallium nitride as an electron transport layer for planar perovskite solar cells
Huiyun Wei,Jionghua Wu,Peng Qiu,Sanjie Liu,Yingfeng He,Mingzeng Peng,Dongmei Li,Qingbo Meng,Francisco Zaera,Xinhe Zheng +9 more
TL;DR: In this article, low-temperature deposited gallium nitride (GaN) thin-films have been introduced into planar perovskite solar cells (PSCs) as electron transport layers (ETLs) for the first time.
Journal ArticleDOI
Wet chemical etching induced stress relaxed nanostructures on polar & non-polar epitaxial GaN films
Monu Mishra,Abhiram Gundimeda,Shibin Krishna,Shibin Krishna,Neha Aggarwal,Neha Aggarwal,Bhasker Gahtori,Nita Dilawar,Ved Varun Aggarwal,Manju Singh,R. K. Rakshit,Govind Gupta,Govind Gupta +12 more
TL;DR: The in-depth analysis demonstrates that the chemically etched samples could potentially be utilized as templates in the design/growth of III-nitride based high performance devices.
Journal ArticleDOI
Ultrafast carrier dynamics in GaN nanorods
TL;DR: In this paper, the lifetime of the residue carriers in GaN nanorods is longer than 1.7 ns at room temperature, while the lifetime for GaN thin film is typically a few hundred picoseconds.
Journal ArticleDOI
Strain-assisted structural transformation and band gap tuning in BeO, MgTe, CdS and 2H-SiC: A hybrid density functional study
TL;DR: In this article, structural transformations and electronic structures of (0001) BeO, MgTe, CdS and 2H-SiC films under equibiaxial in-plane strains were studied using the HSE06 range-separated hybrid functionals.
Journal ArticleDOI
Molecular beam epitaxial growth and characterization of catalyst-free InN/InxGa1-xN core/shell nanowire heterostructures on Si(111) substrates.
TL;DR: The InN/InGaN core/shell nanoscale heterostructures exhibit a very high internal quantum efficiency of ∼62% at room temperature, which is attributed to the strong carrier confinement provided by the InGaN shell as well as the nearly intrinsic InN core.
References
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Book
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Journal ArticleDOI
Room-temperature ultraviolet nanowire nanolasers
Michael H. Huang,Samuel S. Mao,Henning Feick,Haoquan Yan,Yiying Wu,Hannes Kind,Eicke R. Weber,Richard E. Russo,Peidong Yang,Peidong Yang +9 more
TL;DR: Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated and self-organized, <0001> oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process.
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Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
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Introduction to Solid State Physics
TL;DR: Kind's new edition is to be welcomed as mentioned in this paper, with a revised format and attractive illustrations, and with the inclusion of much new material this book has become one of the best sources for undergraduate teaching, likely to give the student a wish to dig deeper into the solid state.
Journal ArticleDOI
Band structure of indium antimonide
TL;DR: The band structure of InSb is calculated using the k ·. p perturbation approach and assuming that the conduction and valence band extrema are at k = 0 as mentioned in this paper.