Journal ArticleDOI
When group-III nitrides go infrared: New properties and perspectives
TLDR
In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.Abstract:
Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant materials for solid state lighting and lasing technologies and consequently, have been studied very well. Much less effort has been devoted to InN and In-rich InGaN alloys. A major breakthrough in 2002, stemming from much improved quality of InN films grown using molecular beam epitaxy, resulted in the bandgap of InN being revised from 1.9 eV to a much narrower value of 0.64 eV. This finding triggered a worldwide research thrust into the area of narrow-band-gap group-III nitrides. The low value of the InN bandgap provides a basis for a consistent description of the electronic structure of InGaN and InAlN alloys with all compositions. It extends the fundamental bandgap of the group III-nitride alloy system over a wider spectral region, ranging from the near infrared at ∼1.9 μm (0.64 eV for InN) to the ultraviolet at ∼0.36 μm (3.4 eV for GaN...read more
Citations
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Journal ArticleDOI
The effects of InGaN layer thickness on the performance of InGaN/GaN p—i—n solar cells
Li Liang,Zhao De-Gang,Jiang De-Sheng,Liu Zong-Shun,Chen Ping,Wu Liang-Liang,Le Ling-Cong,Wang Hui,Yang Hui +8 more
TL;DR: In this paper, the effects of the thickness and dislocation density of the absorption layer on the collection efficiency of InGaN-based solar cells are analyzed, and the experimental results demonstrate that the thickness of the inGaN layer and the dislocal density significantly affect the performance.
Journal ArticleDOI
Conspicuous current dependence of the emission energy from InxGa1-xN/GaN quantum well diodes
Dipankar Biswas,Siddhartha Panda +1 more
TL;DR: In this article, a detailed investigation has been carried out through the selfconsistent solutions of the Schrodinger and Poisson equations to elucidate the change of the emission energy and the transition probability with the operating current and explore how the changes depend on the well width of the QW and the In mole fraction.
Journal ArticleDOI
Electron beam induced current microscopy investigation of GaN nanowire arrays grown on Si substrates
Vladimir Neplokh,Ahmed Ali,François H. Julien,Martin Foldyna,Ivan Mukhin,Ivan Mukhin,G. E. Cirlin,G. E. Cirlin,G. E. Cirlin,Jean-Christophe Harmand,Noelle Gogneau,Maria Tchernycheva +11 more
TL;DR: In this paper, the electron beam induced current (EBIC) investigation of GaN nanowires grown on n-doped Si (111) substrates was carried out to acquire information about the modifications of the substrate properties induced by wire growth.
Journal ArticleDOI
Core structures analyses of (a+c)-edge dislocations in wurtzite GaN through atomistic simulations and Peierls–Nabarro model
Cheng Chen,Fanchao Meng,Jun Song +2 more
TL;DR: In this article, the core structures and slip characteristics of (a+c)-edge dislocations on pyramidal planes in wurtzite GaN were investigated employing molecular dynamics simulations.
Journal ArticleDOI
Identification of main contributions to conductivity of epitaxial InN
TL;DR: In this paper, the complex effect of different contributions (spontaneously formed In nanoparticles, near-interface, surface and bulk layers) on electrophysical properties of InN epitaxial films is studied.
References
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Journal ArticleDOI
Room-temperature ultraviolet nanowire nanolasers
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Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
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Journal ArticleDOI
Band structure of indium antimonide
TL;DR: The band structure of InSb is calculated using the k ·. p perturbation approach and assuming that the conduction and valence band extrema are at k = 0 as mentioned in this paper.