Journal ArticleDOI
When group-III nitrides go infrared: New properties and perspectives
TLDR
In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.Abstract:
Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant materials for solid state lighting and lasing technologies and consequently, have been studied very well. Much less effort has been devoted to InN and In-rich InGaN alloys. A major breakthrough in 2002, stemming from much improved quality of InN films grown using molecular beam epitaxy, resulted in the bandgap of InN being revised from 1.9 eV to a much narrower value of 0.64 eV. This finding triggered a worldwide research thrust into the area of narrow-band-gap group-III nitrides. The low value of the InN bandgap provides a basis for a consistent description of the electronic structure of InGaN and InAlN alloys with all compositions. It extends the fundamental bandgap of the group III-nitride alloy system over a wider spectral region, ranging from the near infrared at ∼1.9 μm (0.64 eV for InN) to the ultraviolet at ∼0.36 μm (3.4 eV for GaN...read more
Citations
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Proceedings ArticleDOI
A ZnO/InN/GaN heterojunction photodetector with extended infrared response
Lung-Hsing Hsu,Shun-Chieh Hsu,Hsin Ying Lee,Yu-Lin Tsai,Da-Wei Lin,Hao-Chung Kuo,Yi-Chia Hwang,Yin-Han Chen,Jr-Hau He,Yuh-Jen Cheng,Shih-Yen Lin,Chien-Chung Lin +11 more
TL;DR: In this paper, an extended infrared photoresponse was observed in a ZnO/InN/GaN heterojunction diode with InN grown by MOCVD.
Proceedings ArticleDOI
Optical properties of InN-based photodetection devices
TL;DR: In this paper, the InN capped with GaN structures is promising for extended visible and infrared absorption, and a ZnO/GaN/InN photodetection device is demonstrated with extended IR response, and the quantum efficiency is 2.28%.
Journal ArticleDOI
Enhanced Specific Detectivity and UV-to-Visible Rejection-Ratio of Visible-Blind Metal–Semiconductor–Metal Photodetectors, Based on Epitaxial GaN/Si(111)
TL;DR: In this article , a very high specific detectivity and UV-to-visible rejection ratio (UVRR) is reported for visible-blind metal-semiconductor-metal (MSM) photodetectors (PDs), fabricated with gallium nitride (GaN) on Si(111) epitaxial layers.
Proceedings ArticleDOI
P-type InGaN across entire composition range
Ke Wang,Takayuki Katsuki,Junichi Sakaguchi,Tsutomu Araki,Yasushi Nanishi,Kin Man Yu,Marie A. Mayer,Esther Alarcon-Llado,Joel W. Ager,Wladek Walukiewicz +9 more
TL;DR: In this paper, a systematic investigation on Mg doped InGaN epilayers grown by plasma-assisted molecular beam epitaxy is presented. And the results show the realization of p-type InGaNs across the entire alloy composition range.
Book ChapterDOI
Performance Enhancement of InGaN/GaN Green QW LEDs with Different Interlayers and Doping in the Barriers
Apu Mistry,Dipankar Biswas +1 more
TL;DR: In this paper, the effect of introducing an InAlN or AlGaN IL (interlayer) in between the barrier and QW for the green emission has been studied, and the best results are obtained for the Al GaN IL which increases the transition probability up to 2 times, as compared to the QW LEDs, without IL.
References
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Book
Introduction to solid state physics
TL;DR: In this paper, the Hartree-Fock Approximation of many-body techniques and the Electron Gas Polarons and Electron-phonon Interaction are discussed.
Journal ArticleDOI
Room-temperature ultraviolet nanowire nanolasers
Michael H. Huang,Samuel S. Mao,Henning Feick,Haoquan Yan,Yiying Wu,Hannes Kind,Eicke R. Weber,Richard E. Russo,Peidong Yang,Peidong Yang +9 more
TL;DR: Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated and self-organized, <0001> oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process.
Journal ArticleDOI
Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
Journal ArticleDOI
Introduction to Solid State Physics
TL;DR: Kind's new edition is to be welcomed as mentioned in this paper, with a revised format and attractive illustrations, and with the inclusion of much new material this book has become one of the best sources for undergraduate teaching, likely to give the student a wish to dig deeper into the solid state.
Journal ArticleDOI
Band structure of indium antimonide
TL;DR: The band structure of InSb is calculated using the k ·. p perturbation approach and assuming that the conduction and valence band extrema are at k = 0 as mentioned in this paper.