Journal ArticleDOI
When group-III nitrides go infrared: New properties and perspectives
TLDR
In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.Abstract:
Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant materials for solid state lighting and lasing technologies and consequently, have been studied very well. Much less effort has been devoted to InN and In-rich InGaN alloys. A major breakthrough in 2002, stemming from much improved quality of InN films grown using molecular beam epitaxy, resulted in the bandgap of InN being revised from 1.9 eV to a much narrower value of 0.64 eV. This finding triggered a worldwide research thrust into the area of narrow-band-gap group-III nitrides. The low value of the InN bandgap provides a basis for a consistent description of the electronic structure of InGaN and InAlN alloys with all compositions. It extends the fundamental bandgap of the group III-nitride alloy system over a wider spectral region, ranging from the near infrared at ∼1.9 μm (0.64 eV for InN) to the ultraviolet at ∼0.36 μm (3.4 eV for GaN...read more
Citations
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Journal ArticleDOI
High Efficient THz Emission From Unbiased and Biased Semiconductor Nanowires Fabricated Using Electron Beam Lithography
Soner Balci,David A. Czaplewski,Il Woong Jung,Ju-Hyung Kim,Fariba Hatami,Patrick Kung,Seongsin M. Kim +6 more
TL;DR: In this article, an interdigitated gold (Au) electrode was patterned on the high-quality InGaAs epilayer grown on InP substrate by molecular beam epitaxy.
Journal ArticleDOI
Fabrication of InN on epitaxial graphene using RF-MBE
TL;DR: In this paper, the authors reported the fabrication of InN layers on the epitaxial graphene (EG) using radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE).
Journal ArticleDOI
Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells
Wei Liu,Degang Zhao,Desheng Jiang,Ping Chen,Dongping Shi,Zongshun Liu,Jianjun Zhu,Jing Yang,Xiang Li,Feng Liang,Shuangtao Liu,Yao Xing,Heng Long,Mo Li +13 more
TL;DR: In this paper, the influence of indium composition on the photovoltaic performance of InGaN/GaN multiple-quantum-well (MQW) solar cells was investigated.
Journal ArticleDOI
Temperature Effect of van der Waals Epitaxial GaN Films on Pulse-Laser-Deposited 2D MoS2 Layer.
TL;DR: In this paper, low temperature plasma-assisted molecular beam epitaxy (MBE) was successfully employed for the deposition of uniform and ~5 nm GaN thin films on layered 2D MoS2 at different substrate temperatures of 500, 600 and 700 °C, respectively.
Journal ArticleDOI
Pyroelectric effect and lattice thermal conductivity of InN/GaN heterostructures
Gopal Hansdah,Bijay Kumar Sahoo +1 more
TL;DR: In this paper, a thermodynamic theory has been proposed to explain the thermal conductivity of InN/GaN heterostructures with and without polarization, which predicts the existence of a transition temperature (Tp) between primary and secondary pyroelectric effect.
References
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Journal ArticleDOI
Room-temperature ultraviolet nanowire nanolasers
Michael H. Huang,Samuel S. Mao,Henning Feick,Haoquan Yan,Yiying Wu,Hannes Kind,Eicke R. Weber,Richard E. Russo,Peidong Yang,Peidong Yang +9 more
TL;DR: Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated and self-organized, <0001> oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process.
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Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
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TL;DR: Kind's new edition is to be welcomed as mentioned in this paper, with a revised format and attractive illustrations, and with the inclusion of much new material this book has become one of the best sources for undergraduate teaching, likely to give the student a wish to dig deeper into the solid state.
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Band structure of indium antimonide
TL;DR: The band structure of InSb is calculated using the k ·. p perturbation approach and assuming that the conduction and valence band extrema are at k = 0 as mentioned in this paper.