Journal ArticleDOI
When group-III nitrides go infrared: New properties and perspectives
TLDR
In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.Abstract:
Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant materials for solid state lighting and lasing technologies and consequently, have been studied very well. Much less effort has been devoted to InN and In-rich InGaN alloys. A major breakthrough in 2002, stemming from much improved quality of InN films grown using molecular beam epitaxy, resulted in the bandgap of InN being revised from 1.9 eV to a much narrower value of 0.64 eV. This finding triggered a worldwide research thrust into the area of narrow-band-gap group-III nitrides. The low value of the InN bandgap provides a basis for a consistent description of the electronic structure of InGaN and InAlN alloys with all compositions. It extends the fundamental bandgap of the group III-nitride alloy system over a wider spectral region, ranging from the near infrared at ∼1.9 μm (0.64 eV for InN) to the ultraviolet at ∼0.36 μm (3.4 eV for GaN...read more
Citations
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Journal ArticleDOI
Growth and Characterization of GaN/InxGa1−xN/InyAl1−yN Quantum Wells by Plasma-Assisted Molecular Beam Epitaxy
TL;DR: The nearly lattice-matched InxGa1−xN/InyAl1−yN epi-layers were grown on a GaN template by plasma-assisted molecular beam epitaxy with a metal modulation technique as mentioned in this paper .
Journal ArticleDOI
High‐Efficiency InGaN Red Mini‐LEDs on Sapphire Toward Full‐Color Nitride Displays: Effect of Strain Modulation
Zhaoying Chen,Bowen Sheng,Fang Liu,Shangfeng Liu,Duo Li,Zexing Yuan,Tao Wang,Xin Rong,Jingsheng Huang,Long Yan,Jason Hu,Shiping Guo,Weikun Ge,Bo Shen,Xinqiang Wang +14 more
TL;DR: In this article , a composite buffer layer is proposed to increase the surface lattice constant of GaN and hence successfully enhances the indium incorporation efficiency of the following InGaN active layers.
Book ChapterDOI
Light Emission and Laser
TL;DR: In this paper, the authors introduced the definition of Einstein coefficients to connect absorption with spontaneous emission and stimulated emission, and derived the spontaneous emission rates from the perturbation theory, where Kane's model is used.
Proceedings ArticleDOI
p-Type InN nanowires: towards ultrahigh speed nanoelectronics and nanophotonics
TL;DR: In this article, the authors demonstrate that p-type InN nanowires can be realized by direct magnesium (Mg) doping, which shows a band-to-band recombination PL peak and a Mg-acceptor energy level related PL peak.
Journal ArticleDOI
Enhancement of optical phonons limited electron mobility in an AlGaN step-shaped quantum well
Dongyi Jia,Y. Qu,S. L. Ban +2 more
TL;DR: In this paper , a four-layer quantum well with n-Al0.45N/Al xGa1− xN bi-component well was proposed to achieve high electron mobility in deep ultraviolet light-emitting diodes.
References
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Book
Introduction to solid state physics
TL;DR: In this paper, the Hartree-Fock Approximation of many-body techniques and the Electron Gas Polarons and Electron-phonon Interaction are discussed.
Journal ArticleDOI
Room-temperature ultraviolet nanowire nanolasers
Michael H. Huang,Samuel S. Mao,Henning Feick,Haoquan Yan,Yiying Wu,Hannes Kind,Eicke R. Weber,Richard E. Russo,Peidong Yang,Peidong Yang +9 more
TL;DR: Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated and self-organized, <0001> oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process.
Journal ArticleDOI
Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
Journal ArticleDOI
Introduction to Solid State Physics
TL;DR: Kind's new edition is to be welcomed as mentioned in this paper, with a revised format and attractive illustrations, and with the inclusion of much new material this book has become one of the best sources for undergraduate teaching, likely to give the student a wish to dig deeper into the solid state.
Journal ArticleDOI
Band structure of indium antimonide
TL;DR: The band structure of InSb is calculated using the k ·. p perturbation approach and assuming that the conduction and valence band extrema are at k = 0 as mentioned in this paper.