Journal ArticleDOI
When group-III nitrides go infrared: New properties and perspectives
TLDR
In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.Abstract:
Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant materials for solid state lighting and lasing technologies and consequently, have been studied very well. Much less effort has been devoted to InN and In-rich InGaN alloys. A major breakthrough in 2002, stemming from much improved quality of InN films grown using molecular beam epitaxy, resulted in the bandgap of InN being revised from 1.9 eV to a much narrower value of 0.64 eV. This finding triggered a worldwide research thrust into the area of narrow-band-gap group-III nitrides. The low value of the InN bandgap provides a basis for a consistent description of the electronic structure of InGaN and InAlN alloys with all compositions. It extends the fundamental bandgap of the group III-nitride alloy system over a wider spectral region, ranging from the near infrared at ∼1.9 μm (0.64 eV for InN) to the ultraviolet at ∼0.36 μm (3.4 eV for GaN...read more
Citations
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Journal ArticleDOI
Polarization-Enhanced p-AlGaN Superlattice Optimization for GUV LED
Yifan Yao,Christian J. Zollner,Michael Wong,Michael Iza,James S. Speck,Steven P. DenBaars,Shuji Nakamura +6 more
TL;DR: In this paper , the authors investigated different aspects of the superlattice including the Al, Ga, and N alloy constituent compositions in terms of LED performance as well as electrical, optical, and morphological characteristics.
Journal ArticleDOI
Exciton states and interband optical transitions in wurtzite InGaN/GaN quantum dot nanowire heterostructures: Effects of hydrostatic pressure
Min Zhang,Min Zhang,Jun-jie Shi +2 more
TL;DR: In this paper, a variational method under the effective mass approximation and the simplified coherent potential approximation was used to solve the confined exciton states and investigate the interband optical transitions in wurtzite In x Ga 1− x N/GaN strained quantum dot (QD) nanowire heterostructures (NWHETs).
Journal ArticleDOI
Influence of polar surface properties on InGaN/GaN core-shell nanorod LED properties
TL;DR: In this article, the influence of the properties of the polar surfaces on the electrical device behavior is studied qualitatively based on a semiclassical simulation model, which is used to evaluate the effect of polar Ga-and N-face nanorod surfaces on electrical device behaviour.
Dissertation
Commercialization of group III nitrides-on-silicon technologies
TL;DR: In this article, the authors proposed a method to improve the performance of a multilayer polysilicon (MLP) with respect to the use of materials science and engineering.
Journal ArticleDOI
Carrier Transport Mechanism at the Interface between Metals and p-Type III-Nitrides Having Different Surface Electronic Structures
Seon-Ho Jang,Ja-Soon Jang +1 more
TL;DR: In this article, the carrier transport mechanism for nonalloyed Ni/Au ohmic contacts to p-In0.15Ga0.85N/GaN superlattices (SLs) and Mg delta (δ)-doped GaN is investigated.
References
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Journal ArticleDOI
Band structure of indium antimonide
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