Journal ArticleDOI
When group-III nitrides go infrared: New properties and perspectives
TLDR
In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.Abstract:
Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant materials for solid state lighting and lasing technologies and consequently, have been studied very well. Much less effort has been devoted to InN and In-rich InGaN alloys. A major breakthrough in 2002, stemming from much improved quality of InN films grown using molecular beam epitaxy, resulted in the bandgap of InN being revised from 1.9 eV to a much narrower value of 0.64 eV. This finding triggered a worldwide research thrust into the area of narrow-band-gap group-III nitrides. The low value of the InN bandgap provides a basis for a consistent description of the electronic structure of InGaN and InAlN alloys with all compositions. It extends the fundamental bandgap of the group III-nitride alloy system over a wider spectral region, ranging from the near infrared at ∼1.9 μm (0.64 eV for InN) to the ultraviolet at ∼0.36 μm (3.4 eV for GaN...read more
Citations
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Journal ArticleDOI
Schottky Barrier Characteristics and Carrier Transport Mechanism for Ohmic Contacts to Strained p-Type InGaN/GaN Superlattice
Sun-Ho Jang,Ja-Soon Jang +1 more
TL;DR: In this article, the metal work function dependence on Schottky barrier characteristics and the carrier transport mechanism for ohmic contacts to strained p-InGaN/GaN superlattices were investigated.
Journal ArticleDOI
Deep donor state in InN: Temperature-dependent electron transport in the electron accumulation layers and its influence on Hall-effect measurements
TL;DR: In this article, temperature-dependent electron transport properties in electron accumulation layers of InN are quantified by using the multilayer model, where room temperature electron densities in the accumulation layers are 583×× 1013 and 326××µ×‵1014 cm−2 with Hall mobilities of 429 and 149 cm2/Vs in In- and N-polarity InN, respectively.
Journal ArticleDOI
Growth Mechanism of InN Nucleation Layers on Epitaxial Graphene Using Metal Organic Vapor Phase Epitaxy and Radio-Frequency Molecular Beam Epitaxy
TL;DR: In this paper, a growth mechanism and a comparative study of the InN nucleation layers grown on epitaxial graphene (EG) by metal organic vapor phase epitaxy (MOVPE) and radio-frequency molecular beam epitaxy(RF-MBE) was presented.
Journal ArticleDOI
Two-dimensional group-III nitrides and devices: A critical review
TL;DR: In this paper, a comprehensive review of 2D group-III nitride materials and their properties is provided, aiming to promote the further development of the related fields of nano-electronic and nano optoelectronics.
Book ChapterDOI
Molecular beam epitaxy: fundamentals, historical background and future prospects
TL;DR: Molecular beam epitaxy (MBE) is an epitaxial technology particularly suited for the preparation of advanced materials, structures and nanostructures as mentioned in this paper, which can be adroitly engineered for both fundamental studies and technological applications.
References
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Journal ArticleDOI
Room-temperature ultraviolet nanowire nanolasers
Michael H. Huang,Samuel S. Mao,Henning Feick,Haoquan Yan,Yiying Wu,Hannes Kind,Eicke R. Weber,Richard E. Russo,Peidong Yang,Peidong Yang +9 more
TL;DR: Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated and self-organized, <0001> oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process.
Journal ArticleDOI
Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
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Introduction to Solid State Physics
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Journal ArticleDOI
Band structure of indium antimonide
TL;DR: The band structure of InSb is calculated using the k ·. p perturbation approach and assuming that the conduction and valence band extrema are at k = 0 as mentioned in this paper.