Journal ArticleDOI
When group-III nitrides go infrared: New properties and perspectives
TLDR
In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.Abstract:
Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant materials for solid state lighting and lasing technologies and consequently, have been studied very well. Much less effort has been devoted to InN and In-rich InGaN alloys. A major breakthrough in 2002, stemming from much improved quality of InN films grown using molecular beam epitaxy, resulted in the bandgap of InN being revised from 1.9 eV to a much narrower value of 0.64 eV. This finding triggered a worldwide research thrust into the area of narrow-band-gap group-III nitrides. The low value of the InN bandgap provides a basis for a consistent description of the electronic structure of InGaN and InAlN alloys with all compositions. It extends the fundamental bandgap of the group III-nitride alloy system over a wider spectral region, ranging from the near infrared at ∼1.9 μm (0.64 eV for InN) to the ultraviolet at ∼0.36 μm (3.4 eV for GaN...read more
Citations
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Journal ArticleDOI
Epitaxial growth of high In-content In0.41Ga0.59N/GaN heterostructure on (11–20) Al2O3 substrate
Shibin Krishna,Neha Aggarwal,Monu Mishra,K.K. Maurya,Mandeep Kaur,Geetanjali Sehgal,Sukhveer Singh,Nita Dilawar,Bipin Kumar Gupta,Govind Gupta +9 more
TL;DR: In this article, the growth characteristics of high indium content InGaN/GaN heterostructure on a-plane sapphire substrate by plasma assisted molecular beam epitaxy have been investigated in detail.
Journal ArticleDOI
Measurement of interface-state-density distribution near conduction band at interface between atomic-layer-deposited Al2O3 and silicon-doped InAlN
TL;DR: In this article, a metal-oxide-semiconductor (MOS) diode fabricated through careful interface formation showed a minimized leakage current and a capacitance-voltage (C-V) characteristic with capacitance change large enough to evaluate the interface-state density, in the range of 1012 eV−1cm−2, near the conduction band.
Journal ArticleDOI
Intersubband optical absorption between multi energy levels of electrons in InGaN/GaN spherical core-shell quantum dots
W. H. Liu,Y. Qu,S. L. Ban +2 more
TL;DR: In this paper, the effect of built-in electric field (BEF) on optical absorption coefficients and secondary peaks of refractive index changes (RICs) in InxGa1-xN/GaN spherical core-shell quantum dots (CSQDs) was investigated by using the principle of density matrix.
Journal ArticleDOI
Carrier transport mechanism of strained AlGaN/GaN Schottky contacts
TL;DR: In this paper, the authors investigated the PFE-based thermionic field emission (PFE-TFE) model based on current-voltage-temperature data, and showed that the TFE is responsible for the current flow across the metal/AlGaN-GaN interface at T ǫ ≥ −293 K.
Journal ArticleDOI
Low Resistivity GaN-Based Polarization-Induced Tunnel Junctions
TL;DR: In this paper, an integrated computational model is used to explore and design the dopant concentration profile and implement the hybrid use of both AlGaN and InGaN layers to systematically optimize the configuration of polarization charges in the structure.
References
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Book
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Journal ArticleDOI
Room-temperature ultraviolet nanowire nanolasers
Michael H. Huang,Samuel S. Mao,Henning Feick,Haoquan Yan,Yiying Wu,Hannes Kind,Eicke R. Weber,Richard E. Russo,Peidong Yang,Peidong Yang +9 more
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Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
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Introduction to Solid State Physics
TL;DR: Kind's new edition is to be welcomed as mentioned in this paper, with a revised format and attractive illustrations, and with the inclusion of much new material this book has become one of the best sources for undergraduate teaching, likely to give the student a wish to dig deeper into the solid state.
Journal ArticleDOI
Band structure of indium antimonide
TL;DR: The band structure of InSb is calculated using the k ·. p perturbation approach and assuming that the conduction and valence band extrema are at k = 0 as mentioned in this paper.