Journal ArticleDOI
When group-III nitrides go infrared: New properties and perspectives
TLDR
In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.Abstract:
Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant materials for solid state lighting and lasing technologies and consequently, have been studied very well. Much less effort has been devoted to InN and In-rich InGaN alloys. A major breakthrough in 2002, stemming from much improved quality of InN films grown using molecular beam epitaxy, resulted in the bandgap of InN being revised from 1.9 eV to a much narrower value of 0.64 eV. This finding triggered a worldwide research thrust into the area of narrow-band-gap group-III nitrides. The low value of the InN bandgap provides a basis for a consistent description of the electronic structure of InGaN and InAlN alloys with all compositions. It extends the fundamental bandgap of the group III-nitride alloy system over a wider spectral region, ranging from the near infrared at ∼1.9 μm (0.64 eV for InN) to the ultraviolet at ∼0.36 μm (3.4 eV for GaN...read more
Citations
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Journal ArticleDOI
Size dependent ultrasonic properties of InN nanowires
TL;DR: In this article, the ultrasonic properties of single crystalline indium nitride nanowires (InN NWs) were studied for wire size (diameter) 6-100nm at 300-K following the interaction potential model.
Journal ArticleDOI
Acoustic phonon scattering on the two-dimensional electron gas in wurtzite AlxGa1−xN/GaN/AlyGa1−yN double heterostructures: The ternary mixed crystal effect and size effect
F.J. Yang,S.L. Ban +1 more
TL;DR: In this paper, the ternary mixed crystal effect and size effect on the mobility of two-dimensional electron gas influenced by the scattering from acoustic phonons via deformation potential in a wurtzite Al x Ga 1− x N/GaN/Al y Ga 1 − y N double heterostructure at 77 K were discussed theoretically.
Dissertation
A study of the elastic and electronic properties of III-nitride semiconductors
TL;DR: Tanner et al. as discussed by the authors studied the elastic and electronic properties of III-nitride semiconductors and found that the properties of these materials are similar to those of polysilicon.
Journal ArticleDOI
Enhanced performance of GaN-based light-emitting diodes with InGaN/GaN superlattice barriers
TL;DR: In this paper, GaN-based multiple quantum well light-emitting diodes (LEDs) with conventional and superlattice barriers have been investigated numerically.
Journal ArticleDOI
Anomalous Rashba spin-orbit interaction in electrically controlled topological insulator based on InN/GaN quantum wells.
TL;DR: It is demonstrated that for InN/GaN quantum wells in a Hall bar geometry, the critical voltage for the topological phase transition depends distinctly on the width of the structure and a significant spin splitting of the edge states lying in the 2D band gap can be almost switched off by increasing the electric field in quantum wells only by a few percent.
References
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Book
Introduction to solid state physics
TL;DR: In this paper, the Hartree-Fock Approximation of many-body techniques and the Electron Gas Polarons and Electron-phonon Interaction are discussed.
Journal ArticleDOI
Room-temperature ultraviolet nanowire nanolasers
Michael H. Huang,Samuel S. Mao,Henning Feick,Haoquan Yan,Yiying Wu,Hannes Kind,Eicke R. Weber,Richard E. Russo,Peidong Yang,Peidong Yang +9 more
TL;DR: Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated and self-organized, <0001> oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process.
Journal ArticleDOI
Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
Journal ArticleDOI
Introduction to Solid State Physics
TL;DR: Kind's new edition is to be welcomed as mentioned in this paper, with a revised format and attractive illustrations, and with the inclusion of much new material this book has become one of the best sources for undergraduate teaching, likely to give the student a wish to dig deeper into the solid state.
Journal ArticleDOI
Band structure of indium antimonide
TL;DR: The band structure of InSb is calculated using the k ·. p perturbation approach and assuming that the conduction and valence band extrema are at k = 0 as mentioned in this paper.