Journal ArticleDOI
When group-III nitrides go infrared: New properties and perspectives
TLDR
In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.Abstract:
Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant materials for solid state lighting and lasing technologies and consequently, have been studied very well. Much less effort has been devoted to InN and In-rich InGaN alloys. A major breakthrough in 2002, stemming from much improved quality of InN films grown using molecular beam epitaxy, resulted in the bandgap of InN being revised from 1.9 eV to a much narrower value of 0.64 eV. This finding triggered a worldwide research thrust into the area of narrow-band-gap group-III nitrides. The low value of the InN bandgap provides a basis for a consistent description of the electronic structure of InGaN and InAlN alloys with all compositions. It extends the fundamental bandgap of the group III-nitride alloy system over a wider spectral region, ranging from the near infrared at ∼1.9 μm (0.64 eV for InN) to the ultraviolet at ∼0.36 μm (3.4 eV for GaN...read more
Citations
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Journal ArticleDOI
Characterization of Threading Dislocations in PVT-Grown AlN Substrates via x-Ray Topography and Ray Tracing Simulation
Tianyi Zhou,Balaji Raghothamachar,Fangzhen Wu,Rafael Dalmau,Baxter Moody,Spalding Craft,Raoul Schlesser,Michael Dudley,Zlatko Sitar +8 more
TL;DR: In this paper, two major types of threading dislocations were observed in the c-axis-grown boules: threading screw dislocation (TSDs) and threading edge disllocations (TEDs) with Burgers vectors along the [0001] and [11] directions, respectively.
Journal ArticleDOI
Boron arsenide heterostructures: lattice-matched heterointerfaces and strain effects on band alignments and mobility
TL;DR: In this paper, the authors applied predictive atomistic calculations to investigate the properties of BAs heterostructures, such as strain effects on band alignments and carrier mobility, considering BAs as both a thin film and a substrate for lattice-matched materials.
Journal ArticleDOI
Large-scale cubic InN nanocrystals by a combined solution- and vapor-phase method under silica confinement.
TL;DR: The small emission peak energy of InN nanocrystals reveals the superior crystalline quality of the authors' samples, with low or negligible defect density, and will significantly promote InN-based applications in IR optoelectronic device and biology.
Journal ArticleDOI
Improvement of near-infrared absorption linewidth in AlGaN/GaN superlattices by optimization of delta-doping location
C. Edmunds,Liang Tang,J. Shao,D. Li,M. Cervantes,Geoff Gardner,Dmitri N. Zakharov,Michael J. Manfra,Oana Malis +8 more
TL;DR: In this paper, a systematic study of the near-infrared intersubband absorption in AlGaN/GaN superlattices grown by plasma-assisted molecular-beam epitaxy as a function of Si-doping profile with and without δdoping is presented.
Journal ArticleDOI
Dual detection of ultraviolet and visible lights using a DNA-CTMA/GaN photodiode with electrically different polarity.
TL;DR: The DG-PD under dark condition has a negative-bias shift of current-voltage curves, indicating that the DNA-CTMA on n-GaN is quite effective for recognizing visible and UV lights as a dual-detectable photodiode.
References
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Journal ArticleDOI
Room-temperature ultraviolet nanowire nanolasers
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Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
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Introduction to Solid State Physics
TL;DR: Kind's new edition is to be welcomed as mentioned in this paper, with a revised format and attractive illustrations, and with the inclusion of much new material this book has become one of the best sources for undergraduate teaching, likely to give the student a wish to dig deeper into the solid state.
Journal ArticleDOI
Band structure of indium antimonide
TL;DR: The band structure of InSb is calculated using the k ·. p perturbation approach and assuming that the conduction and valence band extrema are at k = 0 as mentioned in this paper.