Journal ArticleDOI
When group-III nitrides go infrared: New properties and perspectives
TLDR
In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.Abstract:
Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant materials for solid state lighting and lasing technologies and consequently, have been studied very well. Much less effort has been devoted to InN and In-rich InGaN alloys. A major breakthrough in 2002, stemming from much improved quality of InN films grown using molecular beam epitaxy, resulted in the bandgap of InN being revised from 1.9 eV to a much narrower value of 0.64 eV. This finding triggered a worldwide research thrust into the area of narrow-band-gap group-III nitrides. The low value of the InN bandgap provides a basis for a consistent description of the electronic structure of InGaN and InAlN alloys with all compositions. It extends the fundamental bandgap of the group III-nitride alloy system over a wider spectral region, ranging from the near infrared at ∼1.9 μm (0.64 eV for InN) to the ultraviolet at ∼0.36 μm (3.4 eV for GaN...read more
Citations
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Journal ArticleDOI
Near-infrared phosphorescence: materials and applications
TL;DR: This review describes the overall progress made in the past ten years on NIR phosphorescent transition-metal complexes including Cu(I), Cu(II), Cr(III), Re(I, Re-I), Re-III, Ru(II) and Au(I) complexes, with a primary focus on material design complemented with a selection of optical, electronic, sensory, and biologic applications.
Journal ArticleDOI
Visible light-driven efficient overall water splitting using p -type metal-nitride nanowire arrays
M. G. Kibria,Faqrul A. Chowdhury,Songrui Zhao,Bandar Alotaibi,Michel L. Trudeau,Hong Guo,Zetian Mi +6 more
TL;DR: It is shown that efficient and stable stoichiometric dissociation of water into hydrogen and oxygen can be achieved under visible light by eradicating the potential barrier on nonpolar surfaces of indium gallium nitride nanowires through controlled p-type dopant incorporation.
Valence band splittings and band offsets of AlN, GaN and InN.
Su-Huai Wei,Alex Zunger +1 more
TL;DR: In this article, first principles electronic structure calculations on wurtzite AlN, GaN, and InN reveal crystal field splitting parameters ΔCF of −217, 42, and 41 meV, respectively.
Journal ArticleDOI
Conductivity in transparent oxide semiconductors
Pdc King,Tim D. Veal +1 more
TL;DR: Understanding this interplay, as well as the microscopic contenders for providing the conductivity of these materials, will prove essential to the future design and control of TCO semiconductors, and their implementation into novel multifunctional devices.
Journal ArticleDOI
InGaN Solar Cells: Present State of the Art and Important Challenges
TL;DR: A review on the present state of the art of In-based solar cells is presented and the most important challenges toward the high-efficiency N materials are discussed in the context of the recent results.
References
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Journal ArticleDOI
Origin of electron accumulation at wurtzite InN surfaces
Imran Mahboob,Tim D. Veal,Lfj Piper,Christopher F McConville,Hai Lu,William J. Schaff,Jürgen Furthmüller,Friedhelm Bechstedt +7 more
TL;DR: In this article, the origin of electron accumulation at wurtzite InN surfaces is explained in terms of the bulk band structure, where the branch point energy, which is the crossover point from donor-type to acceptor-type surface states, is located in the conduction band at the $\ensuremath{\Gamma}$-point.
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Improvement on epitaxial grown of InN by migration enhanced epitaxy
TL;DR: In this article, migration-enhanced epitaxy was used to study the growth of InN on sapphire with an AlN buffer layer, which is composed of an alternative supply of pure In atoms and N2 plasma.
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Physical properties of InN with the band gap energy of 1.1 eV
TL;DR: In this paper, the electrical and optical properties of undoped and Mg-doped InN grown by molecular beam epitaxy on sapphire (0, 0, 0) substrates were reported.
Journal ArticleDOI
Fermi-level stabilization energy in group III nitrides
S. X. Li,S. X. Li,Kin Man Yu,Junqiao Wu,R. E. Jones,R. E. Jones,Wladek Walukiewicz,Joel W. Ager,W. Shan,Eugene E. Haller,Eugene E. Haller,Hai Lu,William J. Schaff +12 more
TL;DR: In this paper, the authors show that the pinning of the surface Fermi energy at E{sub FS is also responsible for surface electron accumulation in as-grown InN and In-rich InGaN alloys.
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Selective-area growth of indium nitride nanowires on gold-patterned Si(100) substrates
TL;DR: In this paper, the authors reported the synthesis of indium nitride (InN) nanowires on gold-patterned silicon substrates in a controlled manner using a method involving thermal evaporation of pure indium.