Journal ArticleDOI
When group-III nitrides go infrared: New properties and perspectives
TLDR
In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.Abstract:
Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant materials for solid state lighting and lasing technologies and consequently, have been studied very well. Much less effort has been devoted to InN and In-rich InGaN alloys. A major breakthrough in 2002, stemming from much improved quality of InN films grown using molecular beam epitaxy, resulted in the bandgap of InN being revised from 1.9 eV to a much narrower value of 0.64 eV. This finding triggered a worldwide research thrust into the area of narrow-band-gap group-III nitrides. The low value of the InN bandgap provides a basis for a consistent description of the electronic structure of InGaN and InAlN alloys with all compositions. It extends the fundamental bandgap of the group III-nitride alloy system over a wider spectral region, ranging from the near infrared at ∼1.9 μm (0.64 eV for InN) to the ultraviolet at ∼0.36 μm (3.4 eV for GaN...read more
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Posted Content
Strain-tunable energy band parameters of graphene-like GaN
TL;DR: In this article, the effect of in-plane equi-biaxial strain on the structural and electronic properties of hypothetical graphene-like GaN monolayer (ML-GaN) was analyzed.
Book ChapterDOI
GaN and InN Nanowires: Growth and Optoelectronic Properties
TL;DR: In this article, the influence of surface effects on the growth and properties of self-assembled GaN and InN nanowires was investigated. But the authors focused on the influence on surface effects only.
Journal ArticleDOI
Anomalous magnetic properties of Mn-implanted InN thin films
TL;DR: In this paper, anomalous magnetic properties of C-axis-oriented Mn-implanted InN thin films on GaN/sapphire substrates were reported, and the appearance of the Meissner effect with superconducting onset temperature near 2.4
Journal ArticleDOI
Temperature effect on shallow impurity states in a wurtzite GaN/AlxGa1-xN core-shell nanowire
TL;DR: In this article, the binding energy of a donor impurity in a wurtzite GaN/AlxGa1-xN core-shell nanowire was investigated by a variational method combined with a finite-difference algorithm.
Journal ArticleDOI
Material characteristics of self-assembled mushroom-like InGaN nanocolumns
Qiming Chen,Changling Yan,Yi Qu +2 more
TL;DR: In this paper, the material characteristics of self-assembled mushroom-like N-polar InGaN/GaN nanowire heterostructure have been clarified, which were achieved by different In content self-assembled GaN nanocolumns grown on (111)-silicon-substrate under Nrich condition by plasma-assist molecular beam epitaxy (PA-MBE).
References
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Book
Introduction to solid state physics
TL;DR: In this paper, the Hartree-Fock Approximation of many-body techniques and the Electron Gas Polarons and Electron-phonon Interaction are discussed.
Journal ArticleDOI
Room-temperature ultraviolet nanowire nanolasers
Michael H. Huang,Samuel S. Mao,Henning Feick,Haoquan Yan,Yiying Wu,Hannes Kind,Eicke R. Weber,Richard E. Russo,Peidong Yang,Peidong Yang +9 more
TL;DR: Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated and self-organized, <0001> oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process.
Journal ArticleDOI
Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
Journal ArticleDOI
Introduction to Solid State Physics
TL;DR: Kind's new edition is to be welcomed as mentioned in this paper, with a revised format and attractive illustrations, and with the inclusion of much new material this book has become one of the best sources for undergraduate teaching, likely to give the student a wish to dig deeper into the solid state.
Journal ArticleDOI
Band structure of indium antimonide
TL;DR: The band structure of InSb is calculated using the k ·. p perturbation approach and assuming that the conduction and valence band extrema are at k = 0 as mentioned in this paper.