Journal ArticleDOI
When group-III nitrides go infrared: New properties and perspectives
TLDR
In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.Abstract:
Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant materials for solid state lighting and lasing technologies and consequently, have been studied very well. Much less effort has been devoted to InN and In-rich InGaN alloys. A major breakthrough in 2002, stemming from much improved quality of InN films grown using molecular beam epitaxy, resulted in the bandgap of InN being revised from 1.9 eV to a much narrower value of 0.64 eV. This finding triggered a worldwide research thrust into the area of narrow-band-gap group-III nitrides. The low value of the InN bandgap provides a basis for a consistent description of the electronic structure of InGaN and InAlN alloys with all compositions. It extends the fundamental bandgap of the group III-nitride alloy system over a wider spectral region, ranging from the near infrared at ∼1.9 μm (0.64 eV for InN) to the ultraviolet at ∼0.36 μm (3.4 eV for GaN...read more
Citations
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Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures
Mirsaeid Sarollahi,Pijush K. Ghosh,Manal A. Aldawsari,Shiva Davari,Malak Refaei,Reem Alhelais,Yuriy I. Mazur,Morgan E. Ware +7 more
TL;DR: In this paper, a Zig-Zag quantum well (QW) structure with a composition grading and subsequent polarization doping was designed by increasing the indium composition from 3% to a maximum value then back to 3%.
Nanoscale mapping of the full strain tensor, rotation and composition in partially relaxed In$_x$Ga$_{1-x}$N layers by scanning X-ray diffraction microscopy
Carsten Richter,Vladimir M. Kaganer,A. Even,Amélie Dussaigne,Pierre Ferret,Frédéric Barbier,Yves-Matthieu Le Vaillant,T. Schulli +7 more
TL;DR: In this article , the authors demonstrate a microscopic mapping of the full tensors of strain and lattice orientation by means of scanning X-ray diffraction microscopy.
Journal ArticleDOI
Reactive nitrogen source based on ECR discharge sustained by 24 GHz radiation
TL;DR: In this article, a source of reactive nitrogen based on ECR discharge plasma, sustained by technological gyrotron radiation, was described, and measurements of atomic nitrogen flux were conducted by mass-spectrometric analysis of the products of the reaction of nitrogen monoxide with atomic nitrogen.
Journal ArticleDOI
The fine structure constant determines spontaneous emission rates from semiconductors
TL;DR: The probability of spontaneous emission from a semiconductor, per oscillation of the optical field, is proportional to the cube of the fine structure constant α and the ratio of the semiconductor dipole parameter Ep to hydrogen's Rydberg energy.
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Effect of Strain-Modulated Multiple Quantum Wells on Carrier Dynamics and Spectral Sensitivity of III-Nitride Photosensitive Devices
TL;DR: In this article, the effect of GaN/In on planar solar cells with different In compositions in all crystallographic orientations has been investigated, and a conversion efficiency of 21% with 74% fill factor is achieved from strain modulated four quantum well based solar cell considering 10% of ‘In' content under one sun AM1.5G illumination.
References
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Book
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TL;DR: In this paper, the Hartree-Fock Approximation of many-body techniques and the Electron Gas Polarons and Electron-phonon Interaction are discussed.
Journal ArticleDOI
Room-temperature ultraviolet nanowire nanolasers
Michael H. Huang,Samuel S. Mao,Henning Feick,Haoquan Yan,Yiying Wu,Hannes Kind,Eicke R. Weber,Richard E. Russo,Peidong Yang,Peidong Yang +9 more
TL;DR: Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated and self-organized, <0001> oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process.
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Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
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Introduction to Solid State Physics
TL;DR: Kind's new edition is to be welcomed as mentioned in this paper, with a revised format and attractive illustrations, and with the inclusion of much new material this book has become one of the best sources for undergraduate teaching, likely to give the student a wish to dig deeper into the solid state.
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Band structure of indium antimonide
TL;DR: The band structure of InSb is calculated using the k ·. p perturbation approach and assuming that the conduction and valence band extrema are at k = 0 as mentioned in this paper.