Sebastian Grinstein

TL;DR: In this article, a measurement of the muon cross section originating from b quark decay in the forward rapidity range 2.4 < y(mu) < 3.2 in pbarp collisions at sqrt(s) = 1.8 TeV was presented.

TL;DR: The results of a search for the pair production of the lightest supersymmetric partner of the bottom quark using 139 fb$−1}$ of proton-proton data collected at 13 TeV by the ATLAS detector is reported in this article.

TL;DR: In this paper, a search for high mass e(+)e(-) or mu(+)mu(-) resonances in pp collisions at root s = 7 TeV at the LHC is presented.

Abstract: Low Gain Avalanche Detectors (LGAD) are based on a n + + -p + -p-p + + structure where an appropriate doping of the multiplication layer (p + ) leads to high enough electric fields for impact ionization. Gain factors of few tens in charge significantly improve the resolution of timing measurements, particularly for thin detectors, where the timing performance was shown to be limited by Landau fluctuations. The main obstacle for their operation is the decrease of gain with irradiation, attributed to effective acceptor removal in the gain layer. Sets of thin sensors were produced by two different producers on different substrates, with different gain layer doping profiles and thicknesses (45, 50 and 80 μ m). Their performance in terms of gain/collected charge and leakage current was compared before and after irradiation with neutrons and pions up to the equivalent fluences of 5 ⋅ 1 0 15 cm−2. Transient Current Technique and charge collection measurements with LHC speed electronics were employed to characterize the detectors. The thin LGAD sensors were shown to perform much better than sensors of standard thickness ( ∼ 300 μ m) and offer larger charge collection with respect to detectors without gain layer for fluences 2 ⋅ 1 0 15 cm−2. Larger initial gain prolongs the beneficial performance of LGADs. Pions were found to be more damaging than neutrons at the same equivalent fluence, while no significant difference was found between different producers. At very high fluences and bias voltages the gain appears due to deep acceptors in the bulk, hence also in thin standard detectors.