National Institute of Advanced Industrial Science and Technology

About: National Institute of Advanced Industrial Science and Technology is a government organization based out in Tsukuba, Ibaraki, Japan. It is known for research contribution in the topics: Catalysis & Thin film. The organization has 22114 authors who have published 65856 publications receiving 1669827 citations. The organization is also known as: Sangyō Gijutsu Sōgō Kenkyū-sho.

Nonvolatile Memory with Multilevel Switching: A Basic Model

Abstract: There is a current upsurge in research on nonvolatile two-terminal resistance random access memory (RRAM) for next generation electronic applications. The RRAM is composed of a simple sandwich of a semiconductor with two metal electrodes. We introduce here an initial model for RRAM with the assumption that the semiconducting part has a nonpercolating domain structure. We solve the model using numerical simulations and the basic carrier transfer mechanism is unveiled in detail. Our model captures three key features observed in experiments: multilevel switchability of the resistance, its memory retention, and hysteretic behavior in the current-voltage curve.

Solar cell efficiency tables (version 44)

Abstract: Consolidated tables showing an extensive listing of the highest independently confirmed efficiencies for solar cells and modules are presented. Guidelines for inclusion of results into these tables are outlined and new entries since January 2010 are reviewed. Copyright # 2010 John Wiley & Sons, Ltd.

Oligothiophene-containing coumarin dyes for efficient dye-sensitized solar cells.

Abstract: We have developed oligothiophene-containing coumarin dyes fully functionalized for dye-sensitized nanocrystalline TiO(2) solar cells (DSSCs). DSSCs based on the dyes gave good performance in terms of incident photon-to-current conversion efficiency (IPCE) in the range of 400-800 nm. A solar energy-to-electricity conversion efficiency (eta) of 7.4% was obtained with a DSSC based on 2-cyano-3-[5'-(1,1,6,6-tetramethyl-10-oxo-2,3,5,6-tetrahydro-1H,4H,10H-11-oxa-3a-aza-benzo[de]anthracen-9-yl)-[2,2']bithiophenyl-5-yl]acrylic acid (NKX-2677) under simulated AM 1.5G irradiation (100 mW cm(-2)) with a mask: short-circuit current density (J(sc)) = 13.5 mA cm(-2); open-circuit voltage (V(oc)) = 0.71 V; fill factor (FF) = 0.77. Transient absorption spectroscopy measurements indicated that electron injection from NKX-2677 to the conduction band of TiO(2) is very rapid (<100 fs), which is much faster than the emission lifetime of the dye (1.0 ns), giving a highly efficient electron injection yield of near unity.