Institution
National Institute of Advanced Industrial Science and Technology
Government•Tsukuba, Ibaraki, Japan•
About: National Institute of Advanced Industrial Science and Technology is a government organization based out in Tsukuba, Ibaraki, Japan. It is known for research contribution in the topics: Catalysis & Thin film. The organization has 22114 authors who have published 65856 publications receiving 1669827 citations. The organization is also known as: Sangyō Gijutsu Sōgō Kenkyū-sho.
Topics: Catalysis, Thin film, Carbon nanotube, Laser, Hydrogen
Papers published on a yearly basis
Papers
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Nagoya University1, University of Grenoble2, University of Padua3, University of Liverpool4, Hong Kong University of Science and Technology5, Massachusetts Institute of Technology6, HRL Laboratories7, University of Sheffield8, Katholieke Universiteit Leuven9, Fraunhofer Society10, Nagoya Institute of Technology11, University of Notre Dame12, Virginia Tech13, Infineon Technologies14, University of Glasgow15, University of Texas at Austin16, University of Bristol17, National Institute of Advanced Industrial Science and Technology18, Cardiff University19, University of Cambridge20, Zhejiang University21
TL;DR: This collection of GaN technology developments is not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve.
Abstract: Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based and currently faced with diminishing returns of performance versus cost of investment. At a material level, its high electric field strength and electron mobility have already shown tremendous potential for high frequency communications and photonic applications. Advances in growth on commercially viable large area substrates are now at the point where power conversion applications of GaN are at the cusp of commercialisation. The future for building on the work described here in ways driven by specific challenges emerging from entirely new markets and applications is very exciting. This collection of GaN technology developments is therefore not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve. First generation production devices are igniting large new markets and applications that can only be achieved using the advantages of higher speed, low specific resistivity and low saturation switching transistors. Major investments are being made by industrial companies in a wide variety of markets exploring the use of the technology in new circuit topologies, packaging solutions and system architectures that are required to achieve and optimise the system advantages offered by GaN transistors. It is this momentum that will drive priorities for the next stages of device research gathered here.
788 citations
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TL;DR: Green et al. as discussed by the authors provided guidelines for the inclusion of results into these tables, which not only provides an authoritative summary of the current state of the art but also encourages researchers to seek independent confir-mation of results and to report results on a standardised basis.
Abstract: Consolidated tables showing an extensive listing of the highest independently confirmed efficiencies for solar cells andmodulesarepresented.GuidelinesforinclusionofresultsintothesetablesareoutlinedandnewentriessinceJune2010arereviewed. Copyright # 2010 John Wiley & Sons, Ltd. KEYWORDSsolar cell efficiency; photovoltaic efficiency; energy conversion efficiency*CorrespondenceMartin A. Green, ARC Photovoltaics Centre of Excellence, University of New South Wales, Sydney 2052, Australia.E-mail: m.green@unsw.edu.auReceived 12 October 2010 1. INTRODUCTION Since January 1993, ‘Progress in Photovoltaics’ haspublished six monthly listings of the highest confirmedefficiencies for a range of photovoltaic cell and moduletechnologies [1–3]. By providing guidelines for theinclusion of results into these tables, this not only providesan authoritative summary of the current state of the art butalso encourages researchers to seek independent confir-mation of results and to report results on a standardisedbasis. In a recent version of these tables (Version 33) [2],results were updated to the new internationally acceptedreferencespectrum(IEC60904–3,Ed.2,2008),wherethiswas possible.Themostimportantcriterionforinclusionofresultsintothe tables is that they must have been measured by arecognised test centre listed elsewhere [1]. A distinction ismade between three different eligible areas: total area;aperture area and designated illumination area [1]. ‘Activearea’ efficiencies are not included. There are also certainminimum values of the area sought for the different devicetypes (above 0.05cm
786 citations
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TL;DR: The first reversible and recyclable hydrogen storage system that operates under mild conditions using CO2, formate and formic acid is shown, which is energy-efficient and green because it operates near ambient conditions, uses water as a solvent, produces high-pressure CO-free hydrogen, and uses pH to control hydrogen production or consumption.
Abstract: Green plants convert CO2 to sugar for energy storage via photosynthesis. We report a novel catalyst that uses CO2 and hydrogen to store energy in formic acid. Using a homogeneous iridium catalyst with a proton-responsive ligand, we show the first reversible and recyclable hydrogen storage system that operates under mild conditions using CO2, formate and formic acid. This system is energy-efficient and green because it operates near ambient conditions, uses water as a solvent, produces high-pressure CO-free hydrogen, and uses pH to control hydrogen production or consumption. The extraordinary and switchable catalytic activity is attributed to the multifunctional ligand, which acts as a proton-relay and strong p-donor, and is rationalized by theoretical and experimental studies.
785 citations
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TL;DR: An overview of the recent developments of porous MOFs as platforms in the functional applications of sorption and separation, heterogeneous catalysis, as supports/host matrices for metal nanoparticles, and as templates/nanoreactors for new material preparation are provided.
783 citations
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TL;DR: It is demonstrated that exposure of HCT116 human colon carcinoma cells to IGF-1 induces the expression of HIF-1α, the regulated subunit of hypoxia-inducible factor 1, a known transactivator of the VEGF gene.
781 citations
Authors
Showing all 22289 results
Name | H-index | Papers | Citations |
---|---|---|---|
Takeo Kanade | 147 | 799 | 103237 |
Ferenc A. Jolesz | 143 | 631 | 66198 |
Michele Parrinello | 133 | 637 | 94674 |
Kazunari Domen | 130 | 908 | 77964 |
Hideo Hosono | 128 | 1549 | 100279 |
Hideyuki Okano | 128 | 1169 | 67148 |
Kurunthachalam Kannan | 126 | 820 | 59886 |
Shaobin Wang | 126 | 872 | 52463 |
Ajit Varki | 124 | 542 | 58772 |
Tao Zhang | 123 | 2772 | 83866 |
Ramamoorthy Ramesh | 122 | 649 | 67418 |
Kazuhito Hashimoto | 120 | 781 | 61195 |
Katsuhiko Mikoshiba | 120 | 866 | 62394 |
Qiang Xu | 117 | 585 | 50151 |
Yoshinori Tokura | 117 | 858 | 70258 |