Technion – Israel Institute of Technology

About: Technion – Israel Institute of Technology is a education organization based out in Haifa, Israel. It is known for research contribution in the topics: Population & Nonlinear system. The organization has 31714 authors who have published 79377 publications receiving 2603976 citations. The organization is also known as: Technion Israel Institute of Technology & Ṭekhniyon, Makhon ṭekhnologi le-Yiśraʼel.

Spontaneous high-concentration dispersions and liquid crystals of graphene

Abstract: Graphene combines unique electronic properties and surprising quantum effects with outstanding thermal and mechanical properties. Many potential applications, including electronics and nanocomposites, require that graphene be dispersed and processed in a fluid phase. Here, we show that graphite spontaneously exfoliates into single-layer graphene in chlorosulphonic acid, and dissolves at isotropic concentrations as high as approximately 2 mg ml(-1), which is an order of magnitude higher than previously reported values. This occurs without the need for covalent functionalization, surfactant stabilization, or sonication, which can compromise the properties of graphene or reduce flake size. We also report spontaneous formation of liquid-crystalline phases at high concentrations ( approximately 20-30 mg ml(-1)). Transparent, conducting films are produced from these dispersions at 1,000 Omega square(-1) and approximately 80% transparency. High-concentration solutions, both isotropic and liquid crystalline, could be particularly useful for making flexible electronics as well as multifunctional fibres.

Discussion of Experimental Proof for the Paradox of Einstein, Rosen, and Podolsky

Abstract: A brief review of the physical significance of the paradox of Einstein, Rosen, and Podolsky is given, and it is shown that it involves a kind of correlation of the properties of distant noninteracting systems, which is quite different from previously known kinds of correlation. An illustrative hypothesis is considered, which would avoid the paradox, and which would still be consistent with all experimental results that have been analyzed to date. It is shown, however, that there already is an experiment whose significance with regard to this problem has not yet been explicitly brought out, but which is able to prove that this suggested resolution of the paradox (as well as a very wide class of such resolutions) is not tenable. Thus, this experiment may be regarded as the first clear empirical proof that the aspects of the quantum theory discussed by Einstein, Rosen, and Podolsky represent real properties of matter.

State of the Art for Genetic Algorithms and Beyond in Water Resources Planning and Management

Abstract: During the last two decades, the water resources planning and management profession has seen a dramatic increase in the development and application of various types of evolutionary algorithms (EAs). This observation is especially true for application of genetic algorithms, arguably the most popular of the several types of EAs. Generally speaking, EAs repeatedly prove to be flexible and powerful tools in solving an array of complex water resources problems. This paper provides a comprehensive review of state-of-the-art methods and their applications in the field of water resources planning and management. A primary goal in this ASCE Task Committee effort is to identify in an organized fashion some of the seminal contributions of EAs in the areas of water distribution systems, urban drainage and sewer systems, water supply and wastewater treatment, hydrologic and fluvial modeling, groundwater systems, and parameter identification. The paper also identifies major challenges and opportunities for the future, ...

VTEAM: A General Model for Voltage-Controlled Memristors

Abstract: Memristors are novel electrical devices used for a variety of applications, including memory, logic circuits, and neuromorphic systems. Memristive technologies are attractive due to their nonvolatility, scalability, and compatibility with CMOS. Numerous physical experiments have shown the existence of a threshold voltage in some physical memristors. Additionally, as shown in this brief, some applications require voltage-controlled memristors to operate properly. In this brief, a Voltage ThrEshold Adaptive Memristor (VTEAM) model is proposed to describe the behavior of voltage-controlled memristors. The VTEAM model extends the previously proposed ThrEshold Adaptive Memristor (TEAM) model, which describes current-controlled memristors. The VTEAM model has similar advantages as the TEAM model, i.e., it is simple, general, and flexible, and can characterize different voltage-controlled memristors. The VTEAM model is accurate (below 1.5% in terms of the relative root-mean-square error) and computationally efficient as compared with existing memristor models and experimental results describing different memristive technologies.