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Institution

Tokyo Institute of Technology

EducationTokyo, Tôkyô, Japan
About: Tokyo Institute of Technology is a education organization based out in Tokyo, Tôkyô, Japan. It is known for research contribution in the topics: Catalysis & Thin film. The organization has 46775 authors who have published 101656 publications receiving 2357893 citations. The organization is also known as: Tokyo Tech & Tokodai.


Papers
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Journal ArticleDOI
TL;DR: A series of 20 maps of the Japanese Islands from their birth at ca 750-700 Ma to the present, from the viewpoint of plate tectonics is presented in this article.
Abstract: A series of paleogeographic maps of the Japanese Islands, from their birth at ca 750–700 Ma to the present, is newly compiled from the viewpoint of plate tectonics. This series consists of 20 maps that cover all of the major events in the geotectonic evolution of Japan. These include the birth of Japan at the rifted continental margin of the Yangtze craton (ca 750-700 Ma), the tectonic inversion of the continental margin from passive to active (ca 500 Ma), the Paleozoic accretionary growth incorporating fragments from seamounts and oceanic plateaux (ca 480-250 Ma), the collision between Sino-Korea and Yangtze (250–210 Ma), the Mesozoic to Cenozoic accretionary growth (210 Ma-present) including the formation of the Cretaceous paired metamorphic belts (90 Ma), and the Miocene back-arc opening of the Japan Sea that separated Japan as an island arc (25-15 Ma).

974 citations

Journal ArticleDOI
01 May 2008
TL;DR: In this paper, a model of the carrier transport and the subgap density of states in a representative amorphous oxide semiconductor was presented for device simulation of a-IGZO TFTs.
Abstract: We report a model of the carrier transport and the subgap density of states in a representative amorphous oxide semiconductor, amorphous InGaZnO4 (a-IGZO), for device simulation of a-IGZO TFTs. Compared to hydrogenated amorphous silicon, a-IGZO exhibits much lower densities of tail states and deep gap states, leading to the small subthreshold swings and high mobilities.

963 citations

Journal ArticleDOI
TL;DR: In this article, a holistic perspective on changing rainfall-driven flood risk is provided for the late 20th and early 21st centuries, which includes an assessment of changes in flood risk in seven of the regions considered in the recent IPCC SREX report.
Abstract: A holistic perspective on changing rainfall-driven flood risk is provided for the late 20th and early 21st centuries. Economic losses from floods have greatly increased, principally driven by the expanding exposure of assets at risk. It has not been possible to attribute rain-generated peak streamflow trends to anthropogenic climate change over the past several decades. Projected increases in the frequency and intensity of heavy rainfall, based on climate models, should contribute to increases in precipitation-generated local flooding (e.g. flash flooding and urban flooding). This article assesses the literature included in the IPCC SREX report and new literature published since, and includes an assessment of changes in flood risk in seven of the regions considered in the recent IPCC SREX report—Africa, Asia, Central and South America, Europe, North America, Oceania and Polar regions. Also considering newer publications, this article is consistent with the recent IPCC SREX assessment finding that ...

957 citations

Journal ArticleDOI
05 Dec 2005
TL;DR: This paper deals with general pure active filters for power conditioning, and specific hybridactive filters for harmonic filtering of three-phase diode rectifiers.
Abstract: Unlike traditional passive harmonic filters, modern active harmonic filters have the following multiple functions: harmonic filtering, damping,isolation and termination, reactive-power control for power factor correction and voltage regulation, load balancing, voltage-flicker reduction, and/or their combinations. Significant cost reductions in both power semiconductor devices and signal processing devices have inspired manufactures to put active filters on the market. This paper deals with general pure active filters for power conditioning, and specific hybrid active filters for harmonic filtering of three-phase diode rectifiers.

954 citations

Journal ArticleDOI
01 May 2008
TL;DR: In this paper, the authors review the features of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors, as well as circuit operation based on these TFTs.
Abstract: We review the features of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs), as well as circuit operation based on these TFTs. We also report a novel TFT structure which improves environmental stability of the TFT operation by taking full advantage of the a-IGZO properties, where a conventional PECVD a-SiNX:H films serve not only as an effective barrier layer but also as a hydrogen source to form the coplanar source and drain.

952 citations


Authors

Showing all 46967 results

NameH-indexPapersCitations
Matthew Meyerson194553243726
Yury Gogotsi171956144520
Masayuki Yamamoto1711576123028
H. Eugene Stanley1541190122321
Takashi Taniguchi1522141110658
Shu-Hong Yu14479970853
Kazunori Kataoka13890870412
Osamu Jinnouchi13588586104
Hector F. DeLuca133130369395
Shlomo Havlin131101383347
Hiroyuki Iwasaki131100982739
Kazunari Domen13090877964
Hideo Hosono1281549100279
Hideyuki Okano128116967148
Andreas Strasser12850966903
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
202388
2022358
20213,457
20203,695
20193,783
20183,531