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Fundamentals of Power Semiconductor Devices
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TLDR
In this article, the fundamental physics of power semiconductor devices are discussed and an analytical model for explaining the operation of all power Semiconductor devices is presented, focusing on silicon devices.Abstract:
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devicesandincludes the unique attributes and design requirements for emerging silicon carbide devices.read more
Citations
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Journal ArticleDOI
Degraded Switching Characteristics of a High-Current, High-Action Reversely Switched Dynistor
Wang Haiyang,Zhengzhong Zeng,He Xiaoping,Weiqing Chen,Linshen Xie,Fan Guo,Junna Li,Zhang Guowei +7 more
TL;DR: In this paper, the degraded switching characteristics of a high-power reversely switched dynistor (RSD) were tested with a working voltage of 10 kV, the repetition rate of 2 Hz, and a peak current of about 107 kA.
Journal ArticleDOI
Advances of beveled mesas for GaN-based trench Schottky barrier diodes
Fuping Huang,Xingyu Jia,Yajin Liu,Kangkai Tian,Chunshuang Chu,Quan Zheng,Yonghui Zhang,Zhen Xin,Zi-Hui Zhang,Qing Li +9 more
TL;DR: In this paper, a GaN-based trench metal-insulator-semiconductor barrier Schottky rectifier with a beveled mesa and field plate (BM-TMBS) was proposed and investigated.
A monolithically integrated power JFET and Junction Barrier Schottky diode in 4H Silicon Carbide
TL;DR: In this article, the authors present a list of illustrators and illustrators in the context of knowledge-based belief propagation, including the list of TABLES and ILLUSTRATIONS.
Proceedings ArticleDOI
Efficiency Optimization of Dual Active Bridge Converter Based on dV/dt Snubber Capacitors
TL;DR: In this article, a lossless regenerative dV/dt snubber circuit for PWM converters was proposed to achieve high-efficiency high power-density without significant cost and reliability penalties.
References
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Book
Modern power devices
TL;DR: In this article, the authors introduce the concept of field effect transistors in the context of rectifier concepts and introduce a new Rectifier concept called Field Effect Transistor (FET) this article.
Journal ArticleDOI
Silicon-carbide high-voltage (400 V) Schottky barrier diodes
TL;DR: In this paper, the fabrication and characteristics of the first high-voltage (400-V) silicon-carbide (6H-SiC) Schottky barrier diodes are described.
Journal ArticleDOI
Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
TL;DR: In this paper, hole impact ionization coefficients have been accurately measured as a function of temperature in both 4H and 6H-SiC using the pulsed electron beam induced current (P-EBIC) technique.
Journal ArticleDOI
Evolution of MOS-bipolar power semiconductor technology
TL;DR: A review of the evolution of a power transistor technology based on MOS gate control is provided in this article, which offers the advantage of very high input impedance, which allows the control of the devices using low-cost integrated circuits.