BookDOI
Fundamentals of Power Semiconductor Devices
Reads0
Chats0
TLDR
In this article, the fundamental physics of power semiconductor devices are discussed and an analytical model for explaining the operation of all power Semiconductor devices is presented, focusing on silicon devices.Abstract:
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devicesandincludes the unique attributes and design requirements for emerging silicon carbide devices.read more
Citations
More filters
Proceedings ArticleDOI
Low on-resistance power MOSFET design for automotive applications
Tianhong Ye,Kuan W. A. Chee +1 more
TL;DR: The design of the power MOSFET with low voltage rating and low on-resistance for an automotive electric power steering system is concerns.
Journal ArticleDOI
An open circuit voltage decay system for performing injection dependent lifetime spectroscopy.
Shelby Lacouture,James A. Schrock,Emily A. Hirsch,Stephen B. Bayne,Heather O'Brien,Aderinto Ogunniyi +5 more
TL;DR: The following describes a stand-alone, wide-injection range open circuit voltage decay system with unique lifetime extraction algorithms to extract fundamental recombination parameters from a commercial high-voltage PIN diode.
Journal ArticleDOI
In situ thermal runaway of Si-based press-fit diodes monitored by infrared thermography
TL;DR: In this paper, the influence of the semiconductor technology on the thermal runaway involved in the dielectric breakdown of commercial press-fit diodes, operating in reverse conditions, has been studied.
Journal ArticleDOI
High Breakdown Voltage and Low On-Resistance 4H-SiC UMOSFET with Source-Trench Optimization
Taehong Kim,Kwangsoo Kim +1 more
Journal ArticleDOI
Charge Sheet Super Junction in 4H-Silicon Carbide: Practicability, Modeling and Design
K. Akshay,Shreepad Karmalkar +1 more
TL;DR: In this article, the authors discuss details of the charge sheet super junction (CSSJ) in 4H-Silicon Carbide (SiC) and give numerical simulations to establish that, in spite of $E_{C}$ differences, the SiC CSSJ inherits the advantage of upto 15% higher $V_{BR}$ compared to SiC SJ, from its Si counterparts.
References
More filters
Book
Modern power devices
TL;DR: In this article, the authors introduce the concept of field effect transistors in the context of rectifier concepts and introduce a new Rectifier concept called Field Effect Transistor (FET) this article.
Journal ArticleDOI
Silicon-carbide high-voltage (400 V) Schottky barrier diodes
TL;DR: In this paper, the fabrication and characteristics of the first high-voltage (400-V) silicon-carbide (6H-SiC) Schottky barrier diodes are described.
Journal ArticleDOI
Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
TL;DR: In this paper, hole impact ionization coefficients have been accurately measured as a function of temperature in both 4H and 6H-SiC using the pulsed electron beam induced current (P-EBIC) technique.
Journal ArticleDOI
Evolution of MOS-bipolar power semiconductor technology
TL;DR: A review of the evolution of a power transistor technology based on MOS gate control is provided in this article, which offers the advantage of very high input impedance, which allows the control of the devices using low-cost integrated circuits.