BookDOI
Fundamentals of Power Semiconductor Devices
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In this article, the fundamental physics of power semiconductor devices are discussed and an analytical model for explaining the operation of all power Semiconductor devices is presented, focusing on silicon devices.Abstract:
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devicesandincludes the unique attributes and design requirements for emerging silicon carbide devices.read more
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Journal ArticleDOI
at]Hard-switching reliability studies of 1200 V vertical GaN PiN diodes
O. Slobodyan,T. Smith,Jack Flicker,S. Sandoval,S. Sandoval,C. Matthews,C. Matthews,M. van Heukelom,Robert Kaplar,Stanley Atcitty +9 more
TL;DR: In this article, the authors report on reliability testing of vertical GaN (v-GaN) devices under continuous switching conditions of 500, 750, and 1000 V. Using a modified double-pulse test circuit, they evaluate 1200 V-rated vGaN PiN diodes fabricated by Avogy.
Proceedings ArticleDOI
A Near Ideal Edge Termination Technique for Ultrahigh-Voltage 4H-SiC Devices with Multi-Zone Gradient Field Limiting Ring
TL;DR: In this paper, an improved 4H-silicon carbide (SiC) junction barrier Schottky (JBS) rectifier with the application of multi-zone gradient filed limiting ring (MZG-FLR) is proposed and fabricated without extra process steps or masks.
Proceedings ArticleDOI
Evaluation of the operation of depletion-mode SiC power JFET in DC-DC converter applications
TL;DR: In order to test the importance of the dead-time value on the operation and efficiency of the synchronous buck converter, a precise two-channel time-delay pulse signal generator is developed and its operation is described.
Journal ArticleDOI
Superjunction IGBT With Conductivity Modulation Actively Controlled by Two Separate Driving Signals
Jin Wei,Meng Zhang,Kevin J. Chen +2 more
TL;DR: In this paper, a dual-gate superjunction insulated gate bipolar transistor (DG-SJ-IGBT) is proposed and studied with numerical TCAD simulations, where the p-pillar is connected to the pbody using a built-in p-channel MOSFET.
Journal ArticleDOI
AC-SJ VDMOS with ultra-low resistance
TL;DR: In this paper, an accumulation superjunction (AC-SJ) vertical power metaloxide-semiconductor field effect transistor (VDMOS) is proposed and its mechanism is investigated.
References
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Book
Modern power devices
TL;DR: In this article, the authors introduce the concept of field effect transistors in the context of rectifier concepts and introduce a new Rectifier concept called Field Effect Transistor (FET) this article.
Journal ArticleDOI
Silicon-carbide high-voltage (400 V) Schottky barrier diodes
TL;DR: In this paper, the fabrication and characteristics of the first high-voltage (400-V) silicon-carbide (6H-SiC) Schottky barrier diodes are described.
Journal ArticleDOI
Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
TL;DR: In this paper, hole impact ionization coefficients have been accurately measured as a function of temperature in both 4H and 6H-SiC using the pulsed electron beam induced current (P-EBIC) technique.
Journal ArticleDOI
Evolution of MOS-bipolar power semiconductor technology
TL;DR: A review of the evolution of a power transistor technology based on MOS gate control is provided in this article, which offers the advantage of very high input impedance, which allows the control of the devices using low-cost integrated circuits.