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Fundamentals of Power Semiconductor Devices
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In this article, the fundamental physics of power semiconductor devices are discussed and an analytical model for explaining the operation of all power Semiconductor devices is presented, focusing on silicon devices.Abstract:
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devicesandincludes the unique attributes and design requirements for emerging silicon carbide devices.read more
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Journal ArticleDOI
Analytical and Experimental Investigation on A Dynamic Thermo-Sensitive Electrical Parameter With Maximum $dI_{C}/dt$ During Turn-off for High Power Trench Gate/Field-Stop IGBT Modules
TL;DR: In this paper, a dynamic thermo-sensitive electrical parameter (DTSEP) for extracting the junction temperature of the trench gate/field-stop insulated gate bipolar transistor (IGBT) modules by using the maximum collector current falling rate is proposed.
Journal ArticleDOI
Enhancing the intrinsic p-type conductivity of the ultra-wide bandgap Ga2O3 semiconductor
E. Chikoidze,Corinne Sartel,Hagar Mohamed,Ismail Madaci,Tamar Tchelidze,Mircea Modreanu,Pablo Vales-Castro,Carles M. Rubio,Christophe Arnold,Vincent Sallet,Yves Dumont,Amador Pérez-Tomás +11 more
TL;DR: In this article, it was shown that strongly compensated Ga2O3 is also an intrinsic (or native) p-type TSO with the largest bandgap for any reported p type TSO (e.g., NiO, SnO, delafossites, oxychalcogenides).
Journal ArticleDOI
Acoustic Emission in Power Semiconductor Modules—First Observations
Tommi J. Karkkainen,Joonas Talvitie,Mikko Kuisma,Janne Hannonen,Juha-Pekka Strom,Elena Mengotti,Pertti Silventoinen +6 more
TL;DR: In this article, an experimental setup was used to show that acoustic emission does occur because of the switching of power semiconductor components, and an analysis based on propagation delays is used to determine the source of the acoustic emission.
Journal ArticleDOI
15-kV/40-A FREEDM Supercascode: A Cost-Effective SiC High-Voltage and High-Frequency Power Switch
TL;DR: In this article, a 15-kV 40-A SiC three-terminal power switch, the Future Renewable Electric Energy Delivery and Management (FREEDM) supercascode, is reported for the first time, which is based on a series connection of 1.2kV SiC power devices.
Journal ArticleDOI
Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes
Carmine Abbate,Giovanni Busatto,Paolo Cova,Nicola Delmonte,Francesco Giuliani,Francesco Iannuzzo,Annunziata Sanseverino,Francesco Velardi +7 more
TL;DR: In this paper, the authors describe the phenomena involved in single event burnout induced by heavy ion irradiation in SiC Schottky diodes and demonstrate that the failure is caused by a strong local increase of the semiconductor temperature.
References
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Book
Modern power devices
TL;DR: In this article, the authors introduce the concept of field effect transistors in the context of rectifier concepts and introduce a new Rectifier concept called Field Effect Transistor (FET) this article.
Journal ArticleDOI
Silicon-carbide high-voltage (400 V) Schottky barrier diodes
TL;DR: In this paper, the fabrication and characteristics of the first high-voltage (400-V) silicon-carbide (6H-SiC) Schottky barrier diodes are described.
Journal ArticleDOI
Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
TL;DR: In this paper, hole impact ionization coefficients have been accurately measured as a function of temperature in both 4H and 6H-SiC using the pulsed electron beam induced current (P-EBIC) technique.
Journal ArticleDOI
Evolution of MOS-bipolar power semiconductor technology
TL;DR: A review of the evolution of a power transistor technology based on MOS gate control is provided in this article, which offers the advantage of very high input impedance, which allows the control of the devices using low-cost integrated circuits.