BookDOI
Fundamentals of Power Semiconductor Devices
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TLDR
In this article, the fundamental physics of power semiconductor devices are discussed and an analytical model for explaining the operation of all power Semiconductor devices is presented, focusing on silicon devices.Abstract:
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devicesandincludes the unique attributes and design requirements for emerging silicon carbide devices.read more
Citations
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Proceedings ArticleDOI
A High Breakdown Voltage Superjunction MOSFET By Utilizing Double Trench Filling Epitaxy Growth
TL;DR: In this paper, a new structure with the P Pillar formed by utilizing double trench filling epitaxy growth, is proposed in order to reduce the crystal defect during the filling, the trench etching is tilted.
Proceedings ArticleDOI
Bidirectional soft-switched AC/AC high frequency link converter
TL;DR: The proposed converter uses 12 unidirectional switches and overcomes the various shortcomings of conventional AC Link schemes and offers both improved performance and considerable reduction of volume, weight and cost.
Proceedings ArticleDOI
Figures-of-Merit and current metric for the comparison of IGCTs and IGBTs in Modular Multilevel Converters
Arthur Boutry,Cyril Buttay,Dong Dong,Rolando Burgos,Bruno Lefebvre,Florent Morel,Colin Charnock Davidson +6 more
TL;DR: Simulation results of a MMC model and figures of merit are shown to provide consistent results, proving that the proposed figures ofMerit are a very simple and fast way to select the best semiconductor switch.
Book ChapterDOI
Physics-based III-Nitride device modeling
TL;DR: This chapter highlights some of the tradeoffs involved in finding the right balance between physical accuracy and numerical robustness of compact models and aims to tie device-physics of III-Nitride devices to circuit design through circuit-level evaluation.
Journal ArticleDOI
Improving avalanche robustness of SiC MOSFETs by optimizing three-region P-well doping profile
TL;DR: In this article, a cell-level optimization design is proposed to suppress the avalanche failure caused by parasitic BJT activation in SiC MOSFETs by adding a low-doped region at the bottom of the P-well to form a three-region Pwell doping profile.
References
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Book
Modern power devices
TL;DR: In this article, the authors introduce the concept of field effect transistors in the context of rectifier concepts and introduce a new Rectifier concept called Field Effect Transistor (FET) this article.
Journal ArticleDOI
Silicon-carbide high-voltage (400 V) Schottky barrier diodes
TL;DR: In this paper, the fabrication and characteristics of the first high-voltage (400-V) silicon-carbide (6H-SiC) Schottky barrier diodes are described.
Journal ArticleDOI
Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
TL;DR: In this paper, hole impact ionization coefficients have been accurately measured as a function of temperature in both 4H and 6H-SiC using the pulsed electron beam induced current (P-EBIC) technique.
Journal ArticleDOI
Evolution of MOS-bipolar power semiconductor technology
TL;DR: A review of the evolution of a power transistor technology based on MOS gate control is provided in this article, which offers the advantage of very high input impedance, which allows the control of the devices using low-cost integrated circuits.