BookDOI
Fundamentals of Power Semiconductor Devices
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TLDR
In this article, the fundamental physics of power semiconductor devices are discussed and an analytical model for explaining the operation of all power Semiconductor devices is presented, focusing on silicon devices.Abstract:
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devicesandincludes the unique attributes and design requirements for emerging silicon carbide devices.read more
Citations
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Proceedings ArticleDOI
State of the art power switching devices in SiC and their applications
TL;DR: The superior switching performance is discusses as well as the energy efficiency of SiC devices, focusing on high temperature capability such as integrated digital and analog circuits up to 600 C.
Proceedings ArticleDOI
Accurate characterization of switching losses in high-speed, high-voltage Power MOSFETs
TL;DR: In this paper, the authors have discussed load current, freewheeling diode, di/dt and parasitic inductances of SiC Power MOSFETs and performed a similar study for resistive switching conditions as an alternative and robust method to characterize the switching losses of these devices.
Proceedings ArticleDOI
Impacts of high temperature annealing above 1400 ° C under N 2 overpressure to activate acceptors in Mg-implanted GaN
Hideki Sakurai,Tetsuo Narita,Kazufumi Hirukawa,Shinji Yamada,Akihiko Koura,Keita Kataoka,Masahiro Horita,Nobuyuki Ikarashi,Michal Bockowski,Jun Suda,Tetsu Kachi +10 more
TL;DR: In this article, the authors clarified the impact of annealing pressure and temperature on the acceptor activation for Mg-ions-implanted GaN samples and revealed the key process parameters in UHPA, which is at more than 1400°C under the N 2 overpressure exceeding the equilibrium partial pressure.
Proceedings ArticleDOI
Evaluation of high-voltage, high-power 4H-SiC insulated-gate bipolar transistors
TL;DR: In this paper, the static and dynamic characterization of 12 kV and 20 kV N-channel silicon carbide IGBTs is presented for pulsed power and energy conversion applications.
Journal ArticleDOI
The mechanism of contact-resistance formation on lapped n-Si surfaces
A. V. Sachenko,Alexander Belyaev,N. S. Boltovets,A. O. Vinogradov,L. M. Kapitanchuk,R. V. Konakova,Vitaliy Kostylyov,Ya. Ya. Kudryk,V. P. Kladko,V. N. Sheremet +9 more
TL;DR: In this article, the anomalous temperature dependences of the specific contact resistance ρc(T) of Pd2Si-Ti-Au ohmic contacts to lapped n-Si with dopant concentrations of 5 × 1016, 3 × 1017, and 8 ×1017 cm−3 have been obtained.
References
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Book
Modern power devices
TL;DR: In this article, the authors introduce the concept of field effect transistors in the context of rectifier concepts and introduce a new Rectifier concept called Field Effect Transistor (FET) this article.
Journal ArticleDOI
Silicon-carbide high-voltage (400 V) Schottky barrier diodes
TL;DR: In this paper, the fabrication and characteristics of the first high-voltage (400-V) silicon-carbide (6H-SiC) Schottky barrier diodes are described.
Journal ArticleDOI
Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
TL;DR: In this paper, hole impact ionization coefficients have been accurately measured as a function of temperature in both 4H and 6H-SiC using the pulsed electron beam induced current (P-EBIC) technique.
Journal ArticleDOI
Evolution of MOS-bipolar power semiconductor technology
TL;DR: A review of the evolution of a power transistor technology based on MOS gate control is provided in this article, which offers the advantage of very high input impedance, which allows the control of the devices using low-cost integrated circuits.