BookDOI
Fundamentals of Power Semiconductor Devices
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TLDR
In this article, the fundamental physics of power semiconductor devices are discussed and an analytical model for explaining the operation of all power Semiconductor devices is presented, focusing on silicon devices.Abstract:
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devicesandincludes the unique attributes and design requirements for emerging silicon carbide devices.read more
Citations
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Journal ArticleDOI
High-voltage and low specific on-resistance power UMOSFET using P and N type columns
TL;DR: In this paper, the authors presented the unique features exhibited by power 4H-SiC UMOSFET in which N and P type columns (NPC) in the drift region are incorporated to improve the breakdown voltage, the specific on-resistance, and the total lateral cell pitch.
Dissertation
Modélisation multi-physique d'un système électrique de puissance embarqué pour la simulation, le prototypage numérique et la commande
TL;DR: In this article, the authors propose a non-lineaire electrothermique plus precis model for MOSFET SiC, which permet de garantir une bonne qualite de l'energie and reduction du rapport puissance/poids for les systemes embarques.
3D Multi-gate Transistors： Concept, Operation, and Fabrication
Nader,Shehata,Abdel-Rahman,Gaber,Ahmed,Naguib,Ayman,Selmy,Hossam,Hassan,Ibrahim,Shoeer,Omar,Ahmadien,Rewan,Nabeel +15 more
TL;DR: In this article, the authors present a review about the structure, operation, types and fabrication of 3D transistors, including Fin-FET, Tri-gate FET, and Gate-All-Around (GAA) transistors.
Journal ArticleDOI
Large area scanning probe microscope in ultra-high vacuum demonstrated for electrostatic force measurements on high-voltage devices.
Urs Gysin,Thilo Glatzel,Thomas Schmölzer,Adolf Schöner,Sergey A. Reshanov,H. Bartolf,Ernst Meyer +6 more
TL;DR: KPFM measurements before and after sputtering of a copper alloy with chromium grains used as electrical contact surface in ultra-high power switches are presented and the benefit of surface photo voltage measurements are analysed.
Proceedings ArticleDOI
Topology selection for medium-voltage three-phase SiC solid-state transformer
Hossein Sepahvand,Sachin Madhusoodhanan,Keith Corzine,Subhashish Bhattacharya,Mehdi Ferdowsi +4 more
TL;DR: In this paper, different topologies of active rectifiers are studied as candidates for the first stage in SSTs, and the selected topologies are narrowed down to three most suitable topologies.
References
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Book
Modern power devices
TL;DR: In this article, the authors introduce the concept of field effect transistors in the context of rectifier concepts and introduce a new Rectifier concept called Field Effect Transistor (FET) this article.
Journal ArticleDOI
Silicon-carbide high-voltage (400 V) Schottky barrier diodes
TL;DR: In this paper, the fabrication and characteristics of the first high-voltage (400-V) silicon-carbide (6H-SiC) Schottky barrier diodes are described.
Journal ArticleDOI
Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
TL;DR: In this paper, hole impact ionization coefficients have been accurately measured as a function of temperature in both 4H and 6H-SiC using the pulsed electron beam induced current (P-EBIC) technique.
Journal ArticleDOI
Evolution of MOS-bipolar power semiconductor technology
TL;DR: A review of the evolution of a power transistor technology based on MOS gate control is provided in this article, which offers the advantage of very high input impedance, which allows the control of the devices using low-cost integrated circuits.