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Fundamentals of Power Semiconductor Devices
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TLDR
In this article, the fundamental physics of power semiconductor devices are discussed and an analytical model for explaining the operation of all power Semiconductor devices is presented, focusing on silicon devices.Abstract:
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devicesandincludes the unique attributes and design requirements for emerging silicon carbide devices.read more
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Journal ArticleDOI
Strained superjunction U-MOSFET with insulating layer between alternate pillars
TL;DR: In this article, an improved device structure employing strained channel with thin insulating layer between alternately stacked pillars is presented, where biaxial strain is introduced in the channel by the growth of SiGe layer over silicon substrate.
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Tri-Gate Graphene Nanoribbon Transistors With Transverse-Field Bandgap Modulation
TL;DR: In this article, a tri-gate graphene nanoribbon (GNR) transistor with self-aligned side gates, controllable GNR width, and reduced variations in line-edge roughness and width is presented.
Journal ArticleDOI
Sharp Switching by Field-Effect Bandgap Modulation in All-Graphene Side-Gate Transistors
Lieh-Ting Tung,Edwin C. Kan +1 more
TL;DR: In this article, the authors demonstrate a graphene routing process (GRP), which can implement the side-gate GNR transistor with field-effect bandgap modulation (FEBM), and precisely aligns the side gates to the transistor channel, and provides scalable W/L without registry concerns.
Journal ArticleDOI
A novel 4H-SiC MOSFET for low switching loss and high-reliability applications
TL;DR: In this paper, a CSI-MOSFET with a floating P+ implant in the JFET region is proposed, which achieves a better trade-off among specific on-resistance, maximum electric field in gate oxide and switching loss.
Journal ArticleDOI
Features of temperature dependence of contact resistivity in ohmic contacts on lapped n-Si
A. V. Sachenko,Alexander Belyaev,N. S. Boltovets,A. O. Vinogradov,V. P. Kladko,R. V. Konakova,Ya. Ya. Kudryk,Andrian Kuchuk,V. N. Sheremet,Svetlana Vitusevich +9 more
TL;DR: In this article, the temperature dependence of contact resistivity ρc in lapped silicon specimens with donor concentrations of 5'×'1016, 3'× '1017, and 8'×'-1017 cm−3 was studied experimentally.
References
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Book
Modern power devices
TL;DR: In this article, the authors introduce the concept of field effect transistors in the context of rectifier concepts and introduce a new Rectifier concept called Field Effect Transistor (FET) this article.
Journal ArticleDOI
Silicon-carbide high-voltage (400 V) Schottky barrier diodes
TL;DR: In this paper, the fabrication and characteristics of the first high-voltage (400-V) silicon-carbide (6H-SiC) Schottky barrier diodes are described.
Journal ArticleDOI
Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
TL;DR: In this paper, hole impact ionization coefficients have been accurately measured as a function of temperature in both 4H and 6H-SiC using the pulsed electron beam induced current (P-EBIC) technique.
Journal ArticleDOI
Evolution of MOS-bipolar power semiconductor technology
TL;DR: A review of the evolution of a power transistor technology based on MOS gate control is provided in this article, which offers the advantage of very high input impedance, which allows the control of the devices using low-cost integrated circuits.