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Fundamentals of Power Semiconductor Devices
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In this article, the fundamental physics of power semiconductor devices are discussed and an analytical model for explaining the operation of all power Semiconductor devices is presented, focusing on silicon devices.Abstract:
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devicesandincludes the unique attributes and design requirements for emerging silicon carbide devices.read more
Citations
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Journal ArticleDOI
Special features of Fowler-Nordheim stress degradation of SiC-MOSFETs
TL;DR: In this paper, the authors report special features of I ds-V gs and I g-Vgs characteristics of commercially available SiC-MOSFETs during high-gate-voltage and high-temperature stress.
Proceedings ArticleDOI
Solid-state Marx generator with 24 KV 4H-SIC IGBTs
TL;DR: In this article, the state-of-the-art 24-kV n-channel silicon carbide insulated-gate bipolar transistors (IGBTs) for Marx generator circuits were evaluated in a small-scale, four-stage voltage multiplication circuit.
Proceedings ArticleDOI
Characterization of 1.2 kV 4H-SiC power MOSFETs and Si IGBTs at cryogenic and high temperatures
TL;DR: In this paper, the static and switching performance of 1.2kV 4H-SiC planar MOSFETs, Si IGBT and Si trench IGBT over a wide temperature range of 90k to 493k was analyzed.
Proceedings ArticleDOI
A comparative efficiency study on bidirectional grid interface converters applied to low power DC nanogrids
Hans H. Sathler,L. H. Sathler,Frederico L. F. Marcelino,T. R. de Oliveira,Seleme Isaac Seleme,P. F. D. Garcia +5 more
TL;DR: A comparative efficiency study of different topologies for the bidirectional grid interface converter (BGIC) for applications in DC microgrids, which manage the power flow between the utility grid and the DC microgrid with the intent to regulate the main DC bus voltage and simultaneously ensure grid code compliance at the point of common coupling.
Journal ArticleDOI
Electric Field and Interface Charge Extraction in Field-Plate Assisted RESURF Devices
B. K. Boksteen,Anco Heringa,Alessandro Ferrara,Peter G. Steeneken,Jurriaan Schmitz,Raymond J. E. Hueting +5 more
TL;DR: In this article, a methodology for extracting the lateral electric field in the drain extension of thin silicon-on-insulator highvoltage field-plate assisted reduced surface field (RESURF) devices is detailed including its limits and its accuracy.
References
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Book
Modern power devices
TL;DR: In this article, the authors introduce the concept of field effect transistors in the context of rectifier concepts and introduce a new Rectifier concept called Field Effect Transistor (FET) this article.
Journal ArticleDOI
Silicon-carbide high-voltage (400 V) Schottky barrier diodes
TL;DR: In this paper, the fabrication and characteristics of the first high-voltage (400-V) silicon-carbide (6H-SiC) Schottky barrier diodes are described.
Journal ArticleDOI
Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
TL;DR: In this paper, hole impact ionization coefficients have been accurately measured as a function of temperature in both 4H and 6H-SiC using the pulsed electron beam induced current (P-EBIC) technique.
Journal ArticleDOI
Evolution of MOS-bipolar power semiconductor technology
TL;DR: A review of the evolution of a power transistor technology based on MOS gate control is provided in this article, which offers the advantage of very high input impedance, which allows the control of the devices using low-cost integrated circuits.