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Fundamentals of Power Semiconductor Devices
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TLDR
In this article, the fundamental physics of power semiconductor devices are discussed and an analytical model for explaining the operation of all power Semiconductor devices is presented, focusing on silicon devices.Abstract:
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devicesandincludes the unique attributes and design requirements for emerging silicon carbide devices.read more
Citations
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Proceedings ArticleDOI
Applicability of single-chip dual-gate bidirectional IGBTs in matrix converters
Daming Wang,Sai Tang,Shanglin Mo,Jiang Mengxuan,Xin Yin,Jun Wang,Zhikang Shuai,Z. John Shen,T. Paul Chow +8 more
TL;DR: In this article, the applicability and commutation strategy of a new monolithic dual-gate bidirectional IGBT (BD-IGBT) in matrix converters were investigated with mixed-mode device/circuit simulation.
Journal ArticleDOI
High Optical Power Density Forward-Biased Silicon LEDs in Standard CMOS Process
TL;DR: In this paper, the authors presented three low-operating-voltage silicon-based light-emitting devices (Si-LEDs) designed and made in a commercial standard 0.18-μm CMOS process without any modification.
Proceedings ArticleDOI
A new extraction method of SiC power MOSFET threshold voltage using a physical approach
TL;DR: In this paper, the authors proposed a method to extract the threshold voltage Vth based on a physical approach, involving the static I-V measurements and the use of the Levenberg-Marquardt optimization algorithm.
Journal ArticleDOI
Hot Carrier Injection Effects in the Ultrashallow Body SONOS Gate Power MOSFET
TL;DR: In this article, the threshold voltage stability of the ultrashallow body silicon-oxide-nitride-oxideoxide-silicon gate power MOSFET under hot carrier injection conditions is characterized and discussed, and experimental results indicate that hot electron injection will increase the voltage from 1 to 2 V in the lifetime of the device.
Proceedings ArticleDOI
P-i-N diode chip temperature extraction method by investigation into maximum recovery current rate di/dt
TL;DR: In this article, the authors investigated the relationship between the maximum recovery current rate did/dt and chip temperature, and showed that the dependency between diode chip temperature and maximum recovery was linear.
References
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Book
Modern power devices
TL;DR: In this article, the authors introduce the concept of field effect transistors in the context of rectifier concepts and introduce a new Rectifier concept called Field Effect Transistor (FET) this article.
Journal ArticleDOI
Silicon-carbide high-voltage (400 V) Schottky barrier diodes
TL;DR: In this paper, the fabrication and characteristics of the first high-voltage (400-V) silicon-carbide (6H-SiC) Schottky barrier diodes are described.
Journal ArticleDOI
Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
TL;DR: In this paper, hole impact ionization coefficients have been accurately measured as a function of temperature in both 4H and 6H-SiC using the pulsed electron beam induced current (P-EBIC) technique.
Journal ArticleDOI
Evolution of MOS-bipolar power semiconductor technology
TL;DR: A review of the evolution of a power transistor technology based on MOS gate control is provided in this article, which offers the advantage of very high input impedance, which allows the control of the devices using low-cost integrated circuits.