BookDOI
Fundamentals of Power Semiconductor Devices
Reads0
Chats0
TLDR
In this article, the fundamental physics of power semiconductor devices are discussed and an analytical model for explaining the operation of all power Semiconductor devices is presented, focusing on silicon devices.Abstract:
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devicesandincludes the unique attributes and design requirements for emerging silicon carbide devices.read more
Citations
More filters
Proceedings ArticleDOI
Reverse conduction of a 100 A SiC DMOSFET module in high-power applications
TL;DR: In this article, the reverse conduction characteristics of the SiC DMOSFET and the system-level benefits for high-power applications that can be achieved by operating these devices in this manner are discussed.
Journal ArticleDOI
ISCAD - Electric High Performance Drive for Individual Mobility at Extra-Low Voltages
Proceedings ArticleDOI
Analysis and design aspects of a desaturation detection circuit for low voltage power MOSFETs
TL;DR: In this article, an analysis of a desaturation detection circuit specially designed for low voltage power MOSFETs is presented and design aspects are carried out and the characteristics are a low detection threshold hysteresis, a fast shutdown reaction and a junction temperature compensation.
Journal ArticleDOI
A New Mirroring Circuit for Power MOS Current Sensing Highly Immune to EMI
Orazio Aiello,Franco Fiori +1 more
TL;DR: A new current sensor with no connection to the power transistor drain and with improved performance with respect to the existing current-sensing schemes is presented.
Journal ArticleDOI
Silicon Thyristors for Ultrahigh Power (GW) Applications
Jan Vobecky,Hans-Joachim Schulze,Peter Streit,Franz-Josef Niedernostheide,Virgiliu Botan,Jens Przybilla,Uwe Kellner-Werdehausen,Marco Bellini +7 more
TL;DR: In this article, the phase control thyristor (PCT) technology and the design concepts, which brought and maintained the PCT at the top of a power pyramid, are discussed.
References
More filters
Book
Modern power devices
TL;DR: In this article, the authors introduce the concept of field effect transistors in the context of rectifier concepts and introduce a new Rectifier concept called Field Effect Transistor (FET) this article.
Journal ArticleDOI
Silicon-carbide high-voltage (400 V) Schottky barrier diodes
TL;DR: In this paper, the fabrication and characteristics of the first high-voltage (400-V) silicon-carbide (6H-SiC) Schottky barrier diodes are described.
Journal ArticleDOI
Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
TL;DR: In this paper, hole impact ionization coefficients have been accurately measured as a function of temperature in both 4H and 6H-SiC using the pulsed electron beam induced current (P-EBIC) technique.
Journal ArticleDOI
Evolution of MOS-bipolar power semiconductor technology
TL;DR: A review of the evolution of a power transistor technology based on MOS gate control is provided in this article, which offers the advantage of very high input impedance, which allows the control of the devices using low-cost integrated circuits.