BookDOI
Fundamentals of Power Semiconductor Devices
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In this article, the fundamental physics of power semiconductor devices are discussed and an analytical model for explaining the operation of all power Semiconductor devices is presented, focusing on silicon devices.Abstract:
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devicesandincludes the unique attributes and design requirements for emerging silicon carbide devices.read more
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Proceedings ArticleDOI
Low-volume PFC rectifier based on non-symmetric multi-level boost converter
TL;DR: In this article, a universal-input digitally-controlled single-phase rectifier with power factor correction (PFC) based on a modified multi-level boost converter topology is presented.
Journal ArticleDOI
Evaluation of SiC Schottky Diodes Using Pressure Contacts
Jose Ortiz Gonzalez,Olayiwola Alatise,Attahir Murtala Aliyu,Pushparajah Rajaguru,Alberto Castellazzi,Li Ran,Philip Mawby,Chris Bailey +7 more
TL;DR: This paper investigates the implementation and reliability of SiC Schottky diodes in press-pack assemblies, and the impact of pressure loss on the electrothermal stability of parallel devices is investigated.
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Evaluation of Interface Traps Type, Energy Level and Density of SiC MOSFETs by Means of C-V Curves TCAD Simulations
TL;DR: In this paper, the authors studied the trap distribution at the SiC/SiO2 interface and the effect of traps on C-V and I-V curves for a 1200 V SiC MOSFET.
Proceedings ArticleDOI
SiC and GaN based BSNPC inverter for photovoltaic systems
TL;DR: In this paper, the performance analysis of a three level inverter based on SiC and GaN is discussed for photovoltaic applications, which can achieve 99.2% efficiency at 16kHz switching frequency and 1.4kW output power, and operate with good efficiency up to 160kHz.
Journal ArticleDOI
Demonstration of Conductivity Modulation in SiC Bipolar Junction Transistors With Reduced Base Spreading Resistance
TL;DR: In this paper, SiC bipolar junction transistors (BJTs) were fabricated based on the design criterion proposed in our previous study, which quantitatively proved the importance of decreasing a base spreading resistance.
References
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Book
Modern power devices
TL;DR: In this article, the authors introduce the concept of field effect transistors in the context of rectifier concepts and introduce a new Rectifier concept called Field Effect Transistor (FET) this article.
Journal ArticleDOI
Silicon-carbide high-voltage (400 V) Schottky barrier diodes
TL;DR: In this paper, the fabrication and characteristics of the first high-voltage (400-V) silicon-carbide (6H-SiC) Schottky barrier diodes are described.
Journal ArticleDOI
Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
TL;DR: In this paper, hole impact ionization coefficients have been accurately measured as a function of temperature in both 4H and 6H-SiC using the pulsed electron beam induced current (P-EBIC) technique.
Journal ArticleDOI
Evolution of MOS-bipolar power semiconductor technology
TL;DR: A review of the evolution of a power transistor technology based on MOS gate control is provided in this article, which offers the advantage of very high input impedance, which allows the control of the devices using low-cost integrated circuits.