BookDOI
Fundamentals of Power Semiconductor Devices
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In this article, the fundamental physics of power semiconductor devices are discussed and an analytical model for explaining the operation of all power Semiconductor devices is presented, focusing on silicon devices.Abstract:
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devicesandincludes the unique attributes and design requirements for emerging silicon carbide devices.read more
Citations
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Proceedings ArticleDOI
Design of high-speed toroidal winding surface PM machine with SiC-based inverters
TL;DR: In this paper, a high-speed toothless toroidal winding surface permanent magnet machine enabled by the implementation of silicon carbide-based power electronic inverters is proposed. But, the high fundamental frequency required by the high-pole-count machine is challenging to meet with silicon-based Power Electronic Drives because of the limited switching frequency.
Proceedings ArticleDOI
SiC based cascaded multilevel converter for solar applications: Downscaled prototype development
TL;DR: In this paper, a cascaded multilevel converter topology based on Silicon Carbide switches and high frequency components in association with multiple maximum power point tracking capabilities is proposed to address common limitations of central grid inverters, targeting a raise in the overall efficiency of large-scale photovoltaic power plants.
Journal ArticleDOI
Frequency-Improved 4H-SiC IGBT With Multizone Collector Design
TL;DR: In this article, a novel 4H-SiC collector vertical insulated-gate bipolar transistor (MZC-IGBT) with an alternate P+/P−/P+ multizone structure in the collector region is proposed and investigated by numerical simulations.
Proceedings ArticleDOI
Introducing a 1200V vertical merged IGBT and Power MOSFET: The HUBFET
TL;DR: In this article, a hybrid unipolar Bipolar Field Effect Transistor (HUBFET) was proposed. The HUBFet exhibits characteristics of each of the merged devices under differing conditions hence it is both Unipolar and Bipolar in operation.
Proceedings ArticleDOI
Design of Dual-Gate Superjunction IGBT towards Fully Conductivity-Modulated Bipolar Conduction and Near-Unipolar Turn-Off
Jin Wei,Meng Zhang,Kevin J. Chen +2 more
TL;DR: In this article, a dual-gate superjunction IGBT (DG-SJ-IGBT) is designed and studied by numerical TCAD simulations, where the auxiliary gate disconnects the p-pillar during on-state, enabling full conductivity-modulated bipolar conduction and a consequent low V ON.
References
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Book
Modern power devices
TL;DR: In this article, the authors introduce the concept of field effect transistors in the context of rectifier concepts and introduce a new Rectifier concept called Field Effect Transistor (FET) this article.
Journal ArticleDOI
Silicon-carbide high-voltage (400 V) Schottky barrier diodes
TL;DR: In this paper, the fabrication and characteristics of the first high-voltage (400-V) silicon-carbide (6H-SiC) Schottky barrier diodes are described.
Journal ArticleDOI
Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
TL;DR: In this paper, hole impact ionization coefficients have been accurately measured as a function of temperature in both 4H and 6H-SiC using the pulsed electron beam induced current (P-EBIC) technique.
Journal ArticleDOI
Evolution of MOS-bipolar power semiconductor technology
TL;DR: A review of the evolution of a power transistor technology based on MOS gate control is provided in this article, which offers the advantage of very high input impedance, which allows the control of the devices using low-cost integrated circuits.