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Fundamentals of Power Semiconductor Devices
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TLDR
In this article, the fundamental physics of power semiconductor devices are discussed and an analytical model for explaining the operation of all power Semiconductor devices is presented, focusing on silicon devices.Abstract:
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devicesandincludes the unique attributes and design requirements for emerging silicon carbide devices.read more
Citations
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Journal ArticleDOI
Numerical Analysis of Forward-Current/Voltage Characteristics of Vertical GaN Schottky-Barrier Diodes and p-n Diodes on Free-Standing GaN Substrates
Kazuhiro Mochizuki,Tomoyoshi Mishima,Akihisa Terano,Naoki Kaneda,Takashi Ishigaki,Tomonobu Tsuchiya +5 more
TL;DR: In this article, the forward-current-density JF/forwardvoltage VF characteristics of GaN Schottky-barrier diodes (SBDs) and p-n Diodes on free-standing GaN substrates were computationally and experimentally investigated.
Journal ArticleDOI
Finite-Zone Argon Implant Edge Termination for High-Voltage GaN Schottky Rectifiers
TL;DR: In this paper, the results obtained with a finite termination by argon ion implantation at the periphery of GaN Schottky barrier diodes are reported, and it is demonstrated that the implant region width required to obtain the ideal plane parallel breakdown voltage of 1700 V is 50 μm.
Journal ArticleDOI
A Power Module for Grid Inverter With In-Built Short-Circuit Fault Current Capability
Weihua Shao,Ruizhu Wu,Li Ran,Huaping Jiang,Philip Mawby,Daniel J. Rogers,Timothy C. Green,Thomas G. Coombs,Kieran Yardley,Debaprasad Kastha,Prabodh Bajpai,Lin Zhou +11 more
TL;DR: This study proposes a method to increase the power semiconductor's transient thermal capacity, and hence its short-term over-current capability, by integrating a phase-change material inside thePower semiconductor module.
Journal ArticleDOI
Blocking characteristics of diamond junctions with a punch-through design
Atsushi Hiraiwa,Hiroshi Kawarada +1 more
TL;DR: In this paper, the authors accurately project the blocking capability of diamond junctions with a punch-through design, carrying out the ionization integration that adopts their previous ionization coefficients and hence explicitly giving the breakdown voltage and field as a function of the doping concentration and length of drift layers.
Proceedings ArticleDOI
Capacitor aging detection in DC-DC converter output stage
Janne Hannonen,Jari Honkanen,Juha-Pekka Strom,Tommi J. Karkkainen,Pertti Silventoinen,Samuli Raisanen +5 more
TL;DR: In this paper, a step excitation based online capacitor wear-out detection method for output stage capacitor of a step down DC-DC converter is proposed, where changes in the converter output voltage dynamics are detected during operation by analyzing output voltage step response.
References
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Book
Modern power devices
TL;DR: In this article, the authors introduce the concept of field effect transistors in the context of rectifier concepts and introduce a new Rectifier concept called Field Effect Transistor (FET) this article.
Journal ArticleDOI
Silicon-carbide high-voltage (400 V) Schottky barrier diodes
TL;DR: In this paper, the fabrication and characteristics of the first high-voltage (400-V) silicon-carbide (6H-SiC) Schottky barrier diodes are described.
Journal ArticleDOI
Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
TL;DR: In this paper, hole impact ionization coefficients have been accurately measured as a function of temperature in both 4H and 6H-SiC using the pulsed electron beam induced current (P-EBIC) technique.
Journal ArticleDOI
Evolution of MOS-bipolar power semiconductor technology
TL;DR: A review of the evolution of a power transistor technology based on MOS gate control is provided in this article, which offers the advantage of very high input impedance, which allows the control of the devices using low-cost integrated circuits.