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Fundamentals of Power Semiconductor Devices
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TLDR
In this article, the fundamental physics of power semiconductor devices are discussed and an analytical model for explaining the operation of all power Semiconductor devices is presented, focusing on silicon devices.Abstract:
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devicesandincludes the unique attributes and design requirements for emerging silicon carbide devices.read more
Citations
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Journal ArticleDOI
Analysis of Electrical Properties in Ni/GaN Schottky Contacts on nonpolar/semipolar GaN free-standing Substrates
Ren Yuan,Zhiyuan He,Dong Bin,Changan Wang,Zeng Zhaohui,Li Qixin,Zhitao Chen,Liuan Li,Ningyang Liu +8 more
TL;DR: In this article, the electrical properties of Ni/n-GaN Schottky barrier diodes (SBDs) fabricated on GaN bulk substrates with different crystal orientations were investigated.
Journal ArticleDOI
Increase of the Reliability of the Junction Terminations of Reverse-Conducting Insulated Gate Bipolar Transistor by Appropriate Backside Layout Design
TL;DR: In this article, a novel design concept for the edge termination of reverse-conducting insulated gate bipolar transistor (RC-IGBT) is proposed and evaluated and the new design can be easily realized by backside layout design without additional processes and manufacturing cost.
Proceedings ArticleDOI
JBS power-rectifiers for 1.7kV applications with conduction properties close to pure Schottky-design
TL;DR: In this paper, an elaborated study about the design of junction-barrier Schottky (JBS) diodes regarding the width (w) and spacing (s) of the implanted p+ pattern, utilizing epitaxial drift-layer specifications (4H-SiC) suitable for 1.7 kV applications.
Proceedings ArticleDOI
Comparison of Current Suppression Methods to enhance Short Circuit Capability of 1.2 kV SiC Power MOSFETs: A New Approach using a Series-Connected, Gate-Source-Shorted Si Depletion-Mode MOSFET vs Use of a Series Resistance
Ajit Kanale,B. Jayant Baliga +1 more
TL;DR: In this article, a series-connected, gate-source-shorted (GSS) Si depletion-mode (DM) MOSFET was used to enhance the short-circuit capability of SiC power MOSFs.
Journal ArticleDOI
Electrical Characteristics of TiW/ZnO Schottky contact with ALD and PLD
TL;DR: In this article, an electrical and analytical study was carried out to investigate TiW/ZnO Schottky contacts with 30 nm ZnO thin film layers deposited by pulsed laser deposition (PLD), plasma enhanced atomic layer deposition (PEALD), and TALD.
References
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Book
Modern power devices
TL;DR: In this article, the authors introduce the concept of field effect transistors in the context of rectifier concepts and introduce a new Rectifier concept called Field Effect Transistor (FET) this article.
Journal ArticleDOI
Silicon-carbide high-voltage (400 V) Schottky barrier diodes
TL;DR: In this paper, the fabrication and characteristics of the first high-voltage (400-V) silicon-carbide (6H-SiC) Schottky barrier diodes are described.
Journal ArticleDOI
Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
TL;DR: In this paper, hole impact ionization coefficients have been accurately measured as a function of temperature in both 4H and 6H-SiC using the pulsed electron beam induced current (P-EBIC) technique.
Journal ArticleDOI
Evolution of MOS-bipolar power semiconductor technology
TL;DR: A review of the evolution of a power transistor technology based on MOS gate control is provided in this article, which offers the advantage of very high input impedance, which allows the control of the devices using low-cost integrated circuits.