BookDOI
Fundamentals of Power Semiconductor Devices
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TLDR
In this article, the fundamental physics of power semiconductor devices are discussed and an analytical model for explaining the operation of all power Semiconductor devices is presented, focusing on silicon devices.Abstract:
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devicesandincludes the unique attributes and design requirements for emerging silicon carbide devices.read more
Citations
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Journal ArticleDOI
Device Screening Strategy for Balancing Short-Circuit Behavior of Paralleling Silicon Carbide MOSFETs
TL;DR: In this paper, a device screening strategy is proposed to reduce the variation of the short-circuit (SC) behaviors among the parallel-connected devices, based on the offset effect of parameters variation and the single transfer curves variation (TCV).
Journal ArticleDOI
Reliability Model for Electronic Devices under Time Varying Voltage
Luis Carlos Méndez González,Manuel Iván Rodríguez Borbón,Delia J. Valles-Rosales,Arturo Del Valle,Arnoldo Rodriguez +4 more
TL;DR: A reliability model is presented, which describes the lifetime of electronic devices under time-varying voltage via a parametric function based on the Cumulative Damage Model with random failure rate and the modified Inverse Power Law.
Journal ArticleDOI
Nonlinear Capacitance Model of SiC MOSFET Considering Envelope of Switching Trajectory
Ning Wang,Jianzhong Zhang +1 more
TL;DR: In this paper , the authors proposed a modeling method based on the envelope of the switching trajectory, which greatly reduces the complexity of the model and avoids divergent during the simulation, and the results show that the proposed model has enough accuracy and efficiency in dynamic behavior prediction of SiC MOSFETs.
Journal ArticleDOI
Transient performance of SiC MOSFETs as a function of temperature
K. Lawson,S. B. Bayne +1 more
TL;DR: In this paper, the effects of extreme transient conditions on Silicon Carbide MOSFET devices were studied in high stress environments, such as high voltage rise time and high peak currents.
Proceedings ArticleDOI
Comparison of New Octagonal Cell Topology for 1.2 kV 4H-SiC JBSFETs with Linear and Hexagonal Topologies: Analysis and Experimental Results
TL;DR: In this article, the authors compared the electrical properties of a novel octagonal cell topology for 1.2 kV-rated 4H-SiC JBSFETs with the Linear and Hexagonal (Hex) cell topologies for the first time.
References
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Book
Modern power devices
TL;DR: In this article, the authors introduce the concept of field effect transistors in the context of rectifier concepts and introduce a new Rectifier concept called Field Effect Transistor (FET) this article.
Journal ArticleDOI
Silicon-carbide high-voltage (400 V) Schottky barrier diodes
TL;DR: In this paper, the fabrication and characteristics of the first high-voltage (400-V) silicon-carbide (6H-SiC) Schottky barrier diodes are described.
Journal ArticleDOI
Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
TL;DR: In this paper, hole impact ionization coefficients have been accurately measured as a function of temperature in both 4H and 6H-SiC using the pulsed electron beam induced current (P-EBIC) technique.
Journal ArticleDOI
Evolution of MOS-bipolar power semiconductor technology
TL;DR: A review of the evolution of a power transistor technology based on MOS gate control is provided in this article, which offers the advantage of very high input impedance, which allows the control of the devices using low-cost integrated circuits.