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Fundamentals of Power Semiconductor Devices
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In this article, the fundamental physics of power semiconductor devices are discussed and an analytical model for explaining the operation of all power Semiconductor devices is presented, focusing on silicon devices.Abstract:
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devicesandincludes the unique attributes and design requirements for emerging silicon carbide devices.read more
Citations
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Journal ArticleDOI
Investigation of nitridation and oxidation reactions at SiC/SiO2 interfaces in NO annealing and modeling of their quantitative impacts on mobility of SiC MOSFETs
Proceedings ArticleDOI
Switching and Short-Circuit Performance of 27 nm Gate Oxide, 650 V SiC Planar-Gate MOSFETs with 10 to 15 V Gate Drive Voltage
TL;DR: In this paper, the switching and short-circuit performance of 650 V (BV=850V) 4H-SiC planar-gate MOSFETs with a gate oxide thickness of 27 nm were reported for the first time.
Journal ArticleDOI
High Voltage Insulated Gate Trigger Thyristor With High-Efficiency Injection for Fast Turn-on and High Current Pulse
TL;DR: In this article, a 4.5kV high di/dt insulated gate trigger thyristor (IGTT) with high-efficiency injection is proposed, in which, bottom-punched N-well combined with thick high-doping P+-anode is implemented to enhance the excess carrier injection of both cathode and anode only for fast turn-on with high d/dt and high current pulse.
Proceedings ArticleDOI
Anti-series normally-On SiC JFETs operating as bidirectional switches
TL;DR: In this paper, the authors investigate a bidirectional switch formation that is formed by using two normally-on SiC JFETs in anti-series with no anti-parallel diodes.
Journal ArticleDOI
Gate Bias Dependence of VTH Degradation in Planar and Trench SiC MOSFETs Under Repetitive Short Circuit Tests
Yuan Li,Xintian Zhou,Yuanfu Zhao,Yunpeng Jia,Dongqing Hu,Yusheng Wu,Liqi Zhang,Zibo Chen,Alex Q. Huang +8 more
TL;DR: In this article , a dedicated aging platform is developed to study the degradation of SiC planar- and trench-gate MOSFETs under repetitive short circuit (SC) conditions.
References
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Book
Modern power devices
TL;DR: In this article, the authors introduce the concept of field effect transistors in the context of rectifier concepts and introduce a new Rectifier concept called Field Effect Transistor (FET) this article.
Journal ArticleDOI
Silicon-carbide high-voltage (400 V) Schottky barrier diodes
TL;DR: In this paper, the fabrication and characteristics of the first high-voltage (400-V) silicon-carbide (6H-SiC) Schottky barrier diodes are described.
Journal ArticleDOI
Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
TL;DR: In this paper, hole impact ionization coefficients have been accurately measured as a function of temperature in both 4H and 6H-SiC using the pulsed electron beam induced current (P-EBIC) technique.
Journal ArticleDOI
Evolution of MOS-bipolar power semiconductor technology
TL;DR: A review of the evolution of a power transistor technology based on MOS gate control is provided in this article, which offers the advantage of very high input impedance, which allows the control of the devices using low-cost integrated circuits.