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Fundamentals of Power Semiconductor Devices
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TLDR
In this article, the fundamental physics of power semiconductor devices are discussed and an analytical model for explaining the operation of all power Semiconductor devices is presented, focusing on silicon devices.Abstract:
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devicesandincludes the unique attributes and design requirements for emerging silicon carbide devices.read more
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Journal ArticleDOI
Electrical Characteristics of 10-kV 4H-SiC MPS Rectifiers with High Schottky Barrier Height
TL;DR: In this article, a metal contact process was developed to make the Schottky contact on n-type SiC and ohmic contact on p-type siC at the same time.
Simulation de l’effet de la température et les défauts sur les caractéristiques électriques des diodes à base de GaAs
TL;DR: In this paper, two echantillons of GaAs de type p dopes have been used for DLTS (Deep Level Transient Spectroscopy) to evaluate the qualite of semiconducteurs.
Proceedings ArticleDOI
Benchmarking power transistors and power modules for high-temperature operation (Tj∼200°C)
TL;DR: In this article, the structural and construction characteristics of leading edge high-temperature SiC semiconductor devices are analyzed for power devices with Tj = 175°C and Tj=200°C.
Online Junction-Temperature Sensing of SiC MOSFETs with Minimal Calibration Effort
TL;DR: In this article, the authors proposed a junction-temperature sensing method for silicon-carbide (SiC) MOSFETs with minimal calibration effort, which utilizes the time delay between the gatevoltage and the device current rise as a temperature-sensitive electrical parameter.
Proceedings Article
Adaption of MOSFETs current slope by systematic adjustment of common source stray inductance and gate resistance
TL;DR: In this article, the influence of the common source inductance on the current slope during switching was investigated for low voltage power MOSFETs with high current ratings, in order to minimize induced overvoltage combined with switching losses and lower turn-on and turnoff delay times at the same time.
References
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Book
Modern power devices
TL;DR: In this article, the authors introduce the concept of field effect transistors in the context of rectifier concepts and introduce a new Rectifier concept called Field Effect Transistor (FET) this article.
Journal ArticleDOI
Silicon-carbide high-voltage (400 V) Schottky barrier diodes
TL;DR: In this paper, the fabrication and characteristics of the first high-voltage (400-V) silicon-carbide (6H-SiC) Schottky barrier diodes are described.
Journal ArticleDOI
Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
TL;DR: In this paper, hole impact ionization coefficients have been accurately measured as a function of temperature in both 4H and 6H-SiC using the pulsed electron beam induced current (P-EBIC) technique.
Journal ArticleDOI
Evolution of MOS-bipolar power semiconductor technology
TL;DR: A review of the evolution of a power transistor technology based on MOS gate control is provided in this article, which offers the advantage of very high input impedance, which allows the control of the devices using low-cost integrated circuits.