BookDOI
Fundamentals of Power Semiconductor Devices
Reads0
Chats0
TLDR
In this article, the fundamental physics of power semiconductor devices are discussed and an analytical model for explaining the operation of all power Semiconductor devices is presented, focusing on silicon devices.Abstract:
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devicesandincludes the unique attributes and design requirements for emerging silicon carbide devices.read more
Citations
More filters
Journal ArticleDOI
Intelligent Gate Drivers for Future Power Converters
TL;DR: In this article , the authors give insights into recent developments in the field of power semiconductor gate drivers that exhibit intelligent features such as active switching transient control and optimization of overshoots, electromagnetic interference, and switching losses.
Dissertation
Comparison and Design of High Efficiency Microinverters for Photovoltaic Applications
TL;DR: In this article, a two-stage microinverter is proposed for large scale photovoltaic (PV) power conversion, which can operate at a higher power point and not the true MPP.
Journal ArticleDOI
4kV Silicon Carbide MOSFETs
Zachary Stum,Alexander Viktorovich Bolotnikov,Peter Almern Losee,Kevin Matocha,Stephen Daley Arthur,Jeff Nasadoski,R. Ramakrishna Rao,Osama Saadeh,Ljubisa Dragoljub Stevanovic,Rachael L. Myers-Ward,Charles R. Eddy,D. Kurt Gaskill +11 more
TL;DR: In this paper, the on-resistance and temperature dependence of the SiC vertical MOSFETs were analyzed and the switching performance was evaluated at 1000V and 6A with turn-on and turnoff transients of approximately 20-40ns.
Journal ArticleDOI
Ultrafast Reverse Recovery Time Measurement for Wide-Bandgap Diodes
Daniel Mauch,Fred J. Zutavern,Jarod James Delhotal,M. P. King,Jason C. Neely,I. C. Kizilyalli,Robert Kaplar +6 more
TL;DR: In this article, the reverse recovery times of Avogy gallium nitride diodes were measured over a wide range of forward biases (0 − 1 A) and reverse voltages (0 - 10 kV).
Proceedings ArticleDOI
First report of scaling a normally-off in-situ oxide, GaN interlayer based vertical trench MOSFET (OG-FET)
Dong Ji,Chirag Gupta,Anchal Agarwal,Silvia H. Chan,Cory Lund,Wenwen Li,Matthew A. Laurent,Stacia Keller,Umesh K. Mishra,Srabanti Chowdhury +9 more
TL;DR: In this article, the authors presented the large device scaling of the OGFET to realize high output current, and demonstrated the high performance of high performance OGFet with low specific on-state resistance.
References
More filters
Book
Modern power devices
TL;DR: In this article, the authors introduce the concept of field effect transistors in the context of rectifier concepts and introduce a new Rectifier concept called Field Effect Transistor (FET) this article.
Journal ArticleDOI
Silicon-carbide high-voltage (400 V) Schottky barrier diodes
TL;DR: In this paper, the fabrication and characteristics of the first high-voltage (400-V) silicon-carbide (6H-SiC) Schottky barrier diodes are described.
Journal ArticleDOI
Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
TL;DR: In this paper, hole impact ionization coefficients have been accurately measured as a function of temperature in both 4H and 6H-SiC using the pulsed electron beam induced current (P-EBIC) technique.
Journal ArticleDOI
Evolution of MOS-bipolar power semiconductor technology
TL;DR: A review of the evolution of a power transistor technology based on MOS gate control is provided in this article, which offers the advantage of very high input impedance, which allows the control of the devices using low-cost integrated circuits.