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Fundamentals of Power Semiconductor Devices
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In this article, the fundamental physics of power semiconductor devices are discussed and an analytical model for explaining the operation of all power Semiconductor devices is presented, focusing on silicon devices.Abstract:
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devicesandincludes the unique attributes and design requirements for emerging silicon carbide devices.read more
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An ion-gated bipolar amplifier for ion sensing with enhanced signal and improved noise performance
TL;DR: In this article, an ion-gated bipolar amplifier (IGBA) is proposed for monitoring pH variations in biochips with millions of electric sensors connected to peripheral readout circuitry via extensive metallization.
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Recent progress in diamond-based MOSFETs
Yuan Xiaolu,Yuan Xiaolu,Zheng Yuting,Xiaohua Zhu,Liu Jinlong,Jiangwei Liu,Chengming Li,Peng Jin,Zhanguo Wang +8 more
TL;DR: In this article, the use of diamond materials as metal-oxide-semiconductor field effect transistors (MOSFETs) is discussed, including an analysis of the advantages of the device owing to their high-temperature and negative electron affinity characteristics.
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Investigation of the depletion layer by scanning capacitance force microscopy with Kelvin probe force microscopy
TL;DR: In this paper, a scanning probe microscope (SPM) was developed that combines atomic force microscopy (AFM) with both Kelvin probe force microscope (KFM) to measure the surface potential and scanning capacitance force microscope (SCFM) for measuring the differential capacitance.
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Reconfigurable ultra-thin film GDNMOS device for ESD protection in 28 nm FD-SOI technology
TL;DR: In this article, a novel ESD protection device (GDNMOS: Gated Diode merged NMOS) fabricated with 28nm UTBB FD-SOI high-k metal gate technology was proposed.
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Single Die Multiple 600 V Power Diodes With Deep Trench Terminations and Isolation
TL;DR: In this article, the authors proposed a monolithic integration of vertical power devices, which relies on the creation of deep trench terminations on the edge of the device, thus allowing to avoid 3D peak surface electric field levels whereas complete insulation of the integrated power devices sharing the same backside contact electrode is guaranteed.
References
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Book
Modern power devices
TL;DR: In this article, the authors introduce the concept of field effect transistors in the context of rectifier concepts and introduce a new Rectifier concept called Field Effect Transistor (FET) this article.
Journal ArticleDOI
Silicon-carbide high-voltage (400 V) Schottky barrier diodes
TL;DR: In this paper, the fabrication and characteristics of the first high-voltage (400-V) silicon-carbide (6H-SiC) Schottky barrier diodes are described.
Journal ArticleDOI
Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
TL;DR: In this paper, hole impact ionization coefficients have been accurately measured as a function of temperature in both 4H and 6H-SiC using the pulsed electron beam induced current (P-EBIC) technique.
Journal ArticleDOI
Evolution of MOS-bipolar power semiconductor technology
TL;DR: A review of the evolution of a power transistor technology based on MOS gate control is provided in this article, which offers the advantage of very high input impedance, which allows the control of the devices using low-cost integrated circuits.