BookDOI
Fundamentals of Power Semiconductor Devices
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TLDR
In this article, the fundamental physics of power semiconductor devices are discussed and an analytical model for explaining the operation of all power Semiconductor devices is presented, focusing on silicon devices.Abstract:
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devicesandincludes the unique attributes and design requirements for emerging silicon carbide devices.read more
Citations
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Proceedings ArticleDOI
TCAD model calibration for the SiC/SiO 2 interface trap distribution of a planar SiC MOSFET
TL;DR: In this paper, an accurate calibration of the TCAD model of a commercial SiC MOSFET is only possible by considering a non-uniform trap distribution along the SiO 2 SiC interface.
Journal ArticleDOI
Miller Capacitance Cancellation to Improve SiC MOSFET's Performance in a Phase-Leg Configuration
Boyi Zhang,Shuo Wang +1 more
TL;DR: In this article, a two-stage sensing and injection network is proposed to compensate for the nonlinearity of the Miller capacitance in a phase-leg configuration to suppress both positive and negative gate voltage spikes induced by the crosstalk and reduce the switching power loss with the increased switching speed.
Journal ArticleDOI
Comprehensive physics-based compact model for fast p-i-n diode using MATLAB and Simulink
Peng Xue,Guicui Fu,Dong Zhang +2 more
TL;DR: In this article, a physics-based model for the fast p-i-n diode is proposed based on the 1-D Fourier-based solution of ambipolar diffusion equation (ADE) implemented in MATLAB and Simulink.
Journal ArticleDOI
Comparative performance evaluation of lateral and vertical GaN high-voltage power field-effect transistors
TL;DR: In this paper, specific on-state resistance (R on,sp) and switching performance of various GaN power field-effect transistors (FETs) with 600 and 1200 V ratings were evaluated using analytical calculation and numerical simulation.
Journal ArticleDOI
Modeling and Analysis of Optical Modulators Based on Free-Carrier Plasma Dispersion Effect
Xuanqi Chen,Zhifei Wang,Yi-Shing Chang,Jiang Xu,Jun Feng,Peng Yang,Zhehui Wang,Luan H. K. Duong +7 more
TL;DR: A SPICE-compatible electro-optical co-simulation model, basic optical switch integration model (BOSIM), to systematically study optical modulators using PN, PIN, and metal–insulator–silicon (MIS) capacitor device technologies is proposed.
References
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Book
Modern power devices
TL;DR: In this article, the authors introduce the concept of field effect transistors in the context of rectifier concepts and introduce a new Rectifier concept called Field Effect Transistor (FET) this article.
Journal ArticleDOI
Silicon-carbide high-voltage (400 V) Schottky barrier diodes
TL;DR: In this paper, the fabrication and characteristics of the first high-voltage (400-V) silicon-carbide (6H-SiC) Schottky barrier diodes are described.
Journal ArticleDOI
Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
TL;DR: In this paper, hole impact ionization coefficients have been accurately measured as a function of temperature in both 4H and 6H-SiC using the pulsed electron beam induced current (P-EBIC) technique.
Journal ArticleDOI
Evolution of MOS-bipolar power semiconductor technology
TL;DR: A review of the evolution of a power transistor technology based on MOS gate control is provided in this article, which offers the advantage of very high input impedance, which allows the control of the devices using low-cost integrated circuits.