BookDOI
Fundamentals of Power Semiconductor Devices
Reads0
Chats0
TLDR
In this article, the fundamental physics of power semiconductor devices are discussed and an analytical model for explaining the operation of all power Semiconductor devices is presented, focusing on silicon devices.Abstract:
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devicesandincludes the unique attributes and design requirements for emerging silicon carbide devices.read more
Citations
More filters
Journal ArticleDOI
Selective p-type Doping of GaN:Si by Mg Ion Implantation and Multicycle Rapid Thermal Annealing
Marko J. Tadjer,Boris N. Feigelson,Jordan D. Greenlee,Jaime A. Freitas,Travis J. Anderson,Jennifer K. Hite,Laura B. Ruppalt,Charles R. Eddy,Karl D. Hobart,Fritz J. Kub +9 more
Journal ArticleDOI
Carrier lifetime and breakdown phenomena in SiC power device material
Journal ArticleDOI
Fast Switching $\beta$ -Ga 2 O 3 Power MOSFET With a Trench-Gate Structure
Hang Dong,Shibing Long,Haiding Sun,Xiaolong Zhao,Qiming He,Yuan Qin,Guangzhong Jian,Xuanze Zhou,Yangtong Yu,Wei Guo,Wenhao Xiong,Weibing Hao,Ying Zhang,Huiwen Xue,Xueqiang Xiang,Zhaoan Yu,Hangbing Lv,Qi Liu,Ming Liu +18 more
TL;DR: In this letter, trench-gate metal–oxide–semiconductor field-effect transistors on (010) and Ga-2-O-3 epitaxial layer are fabricated, and the static and dynamic switching properties of the trench-Gate device show the potential of inline-formula.
Journal ArticleDOI
Medium Voltage Soft-Switching DC/DC Converter With Series-Connected SiC MOSFETs
TL;DR: A medium voltage series resonant converter (MVSRC) with series-connected SiC MOSFETs is proposed, and experimental results show that the voltage imbalance is reduced effectively and the switching loss is decreased dramatically.
Proceedings ArticleDOI
Comparative evaluation of isolated front end and isolated back end multi-cell SSTs
TL;DR: In this paper, an isolated front end (IFE) SST concept is proposed to reduce the complexity and physical size of the MV side converter assemblies compared to the well-known isolated back end (IBE) topologies, and the IFE approach performs the entire grid current and output voltage control on the LV side using standard non-isolated |AC|DC boost converter stages.
References
More filters
Book
Modern power devices
TL;DR: In this article, the authors introduce the concept of field effect transistors in the context of rectifier concepts and introduce a new Rectifier concept called Field Effect Transistor (FET) this article.
Journal ArticleDOI
Silicon-carbide high-voltage (400 V) Schottky barrier diodes
TL;DR: In this paper, the fabrication and characteristics of the first high-voltage (400-V) silicon-carbide (6H-SiC) Schottky barrier diodes are described.
Journal ArticleDOI
Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
TL;DR: In this paper, hole impact ionization coefficients have been accurately measured as a function of temperature in both 4H and 6H-SiC using the pulsed electron beam induced current (P-EBIC) technique.
Journal ArticleDOI
Evolution of MOS-bipolar power semiconductor technology
TL;DR: A review of the evolution of a power transistor technology based on MOS gate control is provided in this article, which offers the advantage of very high input impedance, which allows the control of the devices using low-cost integrated circuits.