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Fundamentals of Power Semiconductor Devices
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TLDR
In this article, the fundamental physics of power semiconductor devices are discussed and an analytical model for explaining the operation of all power Semiconductor devices is presented, focusing on silicon devices.Abstract:
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devicesandincludes the unique attributes and design requirements for emerging silicon carbide devices.read more
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Journal ArticleDOI
A novel DTSCR with a variation lateral base doping structure to improve turn-on speed for ESD protection
TL;DR: In this article, a double trigger silicon controlled rectifier device (DTSCR) with a variation lateral base doping (VLBD) structure was proposed for ESD protection applications.
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Loss Model and Efficiency Analysis of Tram Auxiliary Converter Based on a SiC Device
TL;DR: A SiC auxiliary converter prototype is developed and it is found that the loss calculation theory and PLECS loss simulation model is valuable and the thermal images of the system can prove the conclusion about loss distribution to some extent.
Proceedings ArticleDOI
Dynamic characteristics analysis of 1.2kV SiC VDMOS under high temperature up to 375°C
TL;DR: In this article, the high temperature dynamic characteristics of 1.2kV SiC VDMOS, including the gate charge, the switching and the body diode reverse recovery characteristics, are measured and analyzed in detail.
Journal ArticleDOI
A stable pulsed power supply for multi-beamline XFEL operations
Chikara Kondo,Toru Hara,Toru Fukui,Takahiro Inagaki,Hideki Takebe,Shingo Nakazawa,Kenji Fukami,Yusuke Kawaguchi,Hideaki Kawaguchi,Yuji Otake,Hitoshi Tanaka +10 more
TL;DR: A high-power pulsed PS was developed to drive a kicker magnet installed in a SACLA's beam switching system, which provides a high current stability and generation of controllable, bipolar, and trapezoidal current waveforms at 60 Hz.
Proceedings ArticleDOI
Investigation of collector emitter voltage characteristics in thermally stressed discrete IGBT devices
TL;DR: In this article, the authors investigated the changes in on-state collector-emitter voltage drop (V ce, on ) of discrete IGBT devices exposed to thermal cyclic stress.
References
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Book
Modern power devices
TL;DR: In this article, the authors introduce the concept of field effect transistors in the context of rectifier concepts and introduce a new Rectifier concept called Field Effect Transistor (FET) this article.
Journal ArticleDOI
Silicon-carbide high-voltage (400 V) Schottky barrier diodes
TL;DR: In this paper, the fabrication and characteristics of the first high-voltage (400-V) silicon-carbide (6H-SiC) Schottky barrier diodes are described.
Journal ArticleDOI
Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
TL;DR: In this paper, hole impact ionization coefficients have been accurately measured as a function of temperature in both 4H and 6H-SiC using the pulsed electron beam induced current (P-EBIC) technique.
Journal ArticleDOI
Evolution of MOS-bipolar power semiconductor technology
TL;DR: A review of the evolution of a power transistor technology based on MOS gate control is provided in this article, which offers the advantage of very high input impedance, which allows the control of the devices using low-cost integrated circuits.