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Fundamentals of Power Semiconductor Devices
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TLDR
In this article, the fundamental physics of power semiconductor devices are discussed and an analytical model for explaining the operation of all power Semiconductor devices is presented, focusing on silicon devices.Abstract:
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devicesandincludes the unique attributes and design requirements for emerging silicon carbide devices.read more
Citations
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Journal ArticleDOI
15 kV-Class Implantation-Free 4H-SiC BJTs With Record High Current Gain
TL;DR: In this paper, a mesa-etched ultra-high-voltage (0.08 mm2) 4H-SiC bipolar junction transistors with record current gain of 139 were fabricated, measured, and analyzed by device simulation.
Proceedings ArticleDOI
Aging precursors and degradation effects of SiC-MOSFET modules under highly accelerated power cycling conditions
TL;DR: In this paper, a highly accelerated power cycling test platform using current source converter for SiC-MOSFET power modules is proposed, where the control principles of delta and average junction temperatures are introduced.
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Deeply and vertically etched butte structure of vertical GaN p–n diode with avalanche capability
Hayata Fukushima,Shigeyoshi Usami,Masaya Ogura,Yuto Ando,Atsushi Tanaka,Atsushi Tanaka,Manato Deki,Maki Kushimoto,Shugo Nitta,Yoshio Honda,Hiroshi Amano +10 more
Journal ArticleDOI
Breakdown Characteristics of 15-kV-Class 4H-SiC PiN Diodes With Various Junction Termination Structures
TL;DR: In this paper, the effects of the charges at the SiO2/SiC interface are discussed, and the experimental JTE-dose dependence of breakdown voltage with the numerical device simulation is observed.
Journal ArticleDOI
Realizing High-Performance β-Ga₂O₃ MOSFET by Using Variation of Lateral Doping: A TCAD Study
Xuanze Zhou,Qi Liu,Guangwei Xu,Kai Zhou,Xueqiang Xiang,Qiming He,Weibing Hao,Guangzhong Jian,Xiaolong Zhao,Shibing Long +9 more
TL;DR: In this paper, a variation of lateral doping (VLD) technique was proposed to improve blocking voltage and ON-resistance properties in the lateral GA2O3 metal-oxide-semiconductor field effect transistor (MOSFET).
References
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Book
Modern power devices
TL;DR: In this article, the authors introduce the concept of field effect transistors in the context of rectifier concepts and introduce a new Rectifier concept called Field Effect Transistor (FET) this article.
Journal ArticleDOI
Silicon-carbide high-voltage (400 V) Schottky barrier diodes
TL;DR: In this paper, the fabrication and characteristics of the first high-voltage (400-V) silicon-carbide (6H-SiC) Schottky barrier diodes are described.
Journal ArticleDOI
Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
TL;DR: In this paper, hole impact ionization coefficients have been accurately measured as a function of temperature in both 4H and 6H-SiC using the pulsed electron beam induced current (P-EBIC) technique.
Journal ArticleDOI
Evolution of MOS-bipolar power semiconductor technology
TL;DR: A review of the evolution of a power transistor technology based on MOS gate control is provided in this article, which offers the advantage of very high input impedance, which allows the control of the devices using low-cost integrated circuits.