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Fundamentals of Power Semiconductor Devices
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TLDR
In this article, the fundamental physics of power semiconductor devices are discussed and an analytical model for explaining the operation of all power Semiconductor devices is presented, focusing on silicon devices.Abstract:
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devicesandincludes the unique attributes and design requirements for emerging silicon carbide devices.read more
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Proceedings ArticleDOI
IGBT field-stop design for good short circuit ruggedness and a better trade-off with respect to static and dynamic switching characteristics
TL;DR: In this paper, box-like field-stop profiles in combination with a constant p-emitter were analyzed by TCAD simulations and the findings were used to optimize and realize fieldstop profiles by proton implantation with the focus to achieve an improved short-circuit ruggedness at the same softness.
Proceedings ArticleDOI
Development of PSpice modeling platform for 10 kV/100 A SiC MOSFET power module
TL;DR: In this article, a PSpice-based modeling platform for 10 kV/100 A SiC MOSFET power modules is implemented and verified both with static and dynamic experimental data and at different temperatures.
Proceedings ArticleDOI
Experimental of Folded Accumulation Lateral Double-diffused Transistor with Low Specific On Resistance
TL;DR: In this article, a folded accumulation lateral double-diffused MOSFET (FALDMOS) is proposed and manufactured to reduce the on resistance of the drift region.
Journal ArticleDOI
Power Performance Comparison of SiC-IGBT and Si-IGBT Switches in a Three-Phase Inverter for Aircraft Applications
TL;DR: In this article , three different experimental systems were discussed for this purpose, one was the traditional APGU system, and the other two systems were single-phase test (SPT) and three-phase inverter systems, respectively.
References
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Book
Modern power devices
TL;DR: In this article, the authors introduce the concept of field effect transistors in the context of rectifier concepts and introduce a new Rectifier concept called Field Effect Transistor (FET) this article.
Journal ArticleDOI
Silicon-carbide high-voltage (400 V) Schottky barrier diodes
TL;DR: In this paper, the fabrication and characteristics of the first high-voltage (400-V) silicon-carbide (6H-SiC) Schottky barrier diodes are described.
Journal ArticleDOI
Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
TL;DR: In this paper, hole impact ionization coefficients have been accurately measured as a function of temperature in both 4H and 6H-SiC using the pulsed electron beam induced current (P-EBIC) technique.
Journal ArticleDOI
Evolution of MOS-bipolar power semiconductor technology
TL;DR: A review of the evolution of a power transistor technology based on MOS gate control is provided in this article, which offers the advantage of very high input impedance, which allows the control of the devices using low-cost integrated circuits.