BookDOI
Fundamentals of Power Semiconductor Devices
Reads0
Chats0
TLDR
In this article, the fundamental physics of power semiconductor devices are discussed and an analytical model for explaining the operation of all power Semiconductor devices is presented, focusing on silicon devices.Abstract:
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devicesandincludes the unique attributes and design requirements for emerging silicon carbide devices.read more
Citations
More filters
Journal ArticleDOI
Dynamic characteristics of PdCoO2/β-Ga2O3 Schottky junctions
T. Harada,Atsushi Tsukazaki +1 more
TL;DR: In this article, the Schottky barrier diodes based on wide-bandgap semiconductors are proposed for high-frequency applications owing to short reverse recovery time that minimizes the energy dissipation during the switching.
Journal ArticleDOI
Improved Performance of 4H-SiC PiN Diodes Using a Novel Combined High Temperature Oxidation and Annealing Process
Craig A. Fisher,Michael R. Jennings,Yogesh K. Sharma,Dean P. Hamilton,Peter M. Gammon,Amador Pérez-Tomás,Stephen M. Thomas,Susan E. Burrows,Philip Mawby +8 more
TL;DR: In this article, the application of a novel combined high temperature thermal oxidation and annealing process to mesa-isolated epitaxial-anode 4H-SiC PiN diodes with thick (110 μm) drift regions is presented, the aim of which was to increase the carrier lifetime in the 4HSiC.
Journal ArticleDOI
Influence of Device Parameters Spread on Current Distribution of Paralleled Silicon Carbide MOSFETs
TL;DR: In this paper, the influence of device parameters spread on the current distribution of paralleled silicon carbide (SiC) MOSFETs was investigated and the sensitivity of the current imbalance to variations of the device parameters was studied.
Proceedings ArticleDOI
Wide-input high power density flexible converter topology for dc-dc applications
TL;DR: In this article, a 2-phase step-down dc-dc converter topology designed for a wide range of point-of-load (PoL) applications is introduced.
Journal ArticleDOI
Nitrogen-Implanted Guard Rings for 600-V Quasi-Vertical GaN-on-Si Schottky Barrier Diodes With a BFOM of 0.26 GW/cm 2
Xiaolu Guo,Yaozong Zhong,Yu Zhou,Shuai Su,Xin Chen,Shumeng Yan,Jianxun Liu,Xiujian Sun,Qian Sun,Hui Yang +9 more
TL;DR: In this article, a novel Nitrogen-implanted guard ring (GR) technology was demonstrated for the 600-V quasi-vertical GaN-on-Si Schottky barrier diode (SBD).
References
More filters
Book
Modern power devices
TL;DR: In this article, the authors introduce the concept of field effect transistors in the context of rectifier concepts and introduce a new Rectifier concept called Field Effect Transistor (FET) this article.
Journal ArticleDOI
Silicon-carbide high-voltage (400 V) Schottky barrier diodes
TL;DR: In this paper, the fabrication and characteristics of the first high-voltage (400-V) silicon-carbide (6H-SiC) Schottky barrier diodes are described.
Journal ArticleDOI
Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
TL;DR: In this paper, hole impact ionization coefficients have been accurately measured as a function of temperature in both 4H and 6H-SiC using the pulsed electron beam induced current (P-EBIC) technique.
Journal ArticleDOI
Evolution of MOS-bipolar power semiconductor technology
TL;DR: A review of the evolution of a power transistor technology based on MOS gate control is provided in this article, which offers the advantage of very high input impedance, which allows the control of the devices using low-cost integrated circuits.