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Fundamentals of Power Semiconductor Devices
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In this article, the fundamental physics of power semiconductor devices are discussed and an analytical model for explaining the operation of all power Semiconductor devices is presented, focusing on silicon devices.Abstract:
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devicesandincludes the unique attributes and design requirements for emerging silicon carbide devices.read more
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Journal ArticleDOI
AlGaN devices and growth of device structures
Kenneth A. Jones,T.P. Chow,Michael Wraback,Maxim S. Shatalov,Zlatko Sitar,F. Shahedipour,K. Udwary,G. S. Tompa +7 more
TL;DR: In this paper, the structure of GaN/AlGaN devices and their associated material growth and processing issues are examined in some detail, and extrapolations are made to predict what the advantages and challenges would accrue for similar AlGaN electrical and optical devices.
Journal ArticleDOI
Analysis and Comparison of Turn-off Active Gate Control Methods for Low-Voltage Power MOSFETs With High Current Ratings
Bjoern Wittig,Friedrich W. Fuchs +1 more
TL;DR: In this article, an analysis and improvement of the switching behavior of low-voltage power MOSFETs with high current ratings is presented, where turnoff active gate control methods are analyzed and their performance is investigated focusing on reducing the overvoltage at turn-off under the precondition of only a minor increase of switching losses.
Journal ArticleDOI
A Novel Non-Intrusive Technique for BTI Characterization in SiC mosfet s
TL;DR: In this paper, the forward voltage of the body diode during reverse conduction of a small sensing current is introduced as a technique for monitoring threshold voltage (V TH) shift and recovery due to bias temperature instability.
Journal ArticleDOI
Analysis of High-Speed PCB With SiC Devices by Investigating Turn-Off Overvoltage and Interconnection Inductance Influence
TL;DR: In this article, the impact of interconnection inductances to overvoltage during turn-off transient of SiC devices is analyzed, and a prototype half-bridge buck converter with SiC MOSFETs is constructed for the experiments.
Proceedings ArticleDOI
Characterization of lead-free solder and sintered nano-silver die-attach layers using thermal impedance
TL;DR: In this paper, a measurement system for thermal impedance is developed to evaluate three die-attach materials, and three samples using three die attach materials were thermally cycled from -400C to 1250C, and the experimental results show that after 500 cycles, the thermal impedance of SAC305 samples and SN100C samples is increased by 12.8% and 15% respectively, which is much higher than the sample using nano-silver paste for die attach.
References
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Book
Modern power devices
TL;DR: In this article, the authors introduce the concept of field effect transistors in the context of rectifier concepts and introduce a new Rectifier concept called Field Effect Transistor (FET) this article.
Journal ArticleDOI
Silicon-carbide high-voltage (400 V) Schottky barrier diodes
TL;DR: In this paper, the fabrication and characteristics of the first high-voltage (400-V) silicon-carbide (6H-SiC) Schottky barrier diodes are described.
Journal ArticleDOI
Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
TL;DR: In this paper, hole impact ionization coefficients have been accurately measured as a function of temperature in both 4H and 6H-SiC using the pulsed electron beam induced current (P-EBIC) technique.
Journal ArticleDOI
Evolution of MOS-bipolar power semiconductor technology
TL;DR: A review of the evolution of a power transistor technology based on MOS gate control is provided in this article, which offers the advantage of very high input impedance, which allows the control of the devices using low-cost integrated circuits.