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Fundamentals of Power Semiconductor Devices
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In this article, the fundamental physics of power semiconductor devices are discussed and an analytical model for explaining the operation of all power Semiconductor devices is presented, focusing on silicon devices.Abstract:
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devicesandincludes the unique attributes and design requirements for emerging silicon carbide devices.read more
Citations
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Journal ArticleDOI
A Snapback-Free Fast-Switching SOI LIGBT With an Embedded Self-Biased n-MOS
TL;DR: In this article, a 600-V snapback-free fast-switching silicon-on-insulator lateral insulated gate bipolar transistor with an embedded self-biased n-MOS (SBM) is proposed and investigated by simulations.
Proceedings Article
Optimization of PWM dead times in DC/DC-converters considering varying operating conditions and component dependencies
TL;DR: In this paper, the reverse recovery charge for varying dead times and different MOSFET devices is analyzed and a behavioral model is derived to show the quantitative influence of dead times on power losses.
Proceedings ArticleDOI
Improved single-event hardness of trench power MOSFET with a widened split gate
TL;DR: In this paper, a new 200V power MOSFET structure with a widened split gate trench to enhance single-event radiation hardness is proposed and studied by numerical simulation, which not only offers a great Rds(on)×Q gd FOM, but also 55.3% wider radiation-hard Safe Operating Area (RHSOA) than the conventional trench and split gate structure.
Journal ArticleDOI
Introducing Optical Cascode GaN HEMT
TL;DR: In this paper, a novel optically activated cascode gallium nitride (GaN) high-electron-mobility transistor (HEMT) is introduced and evaluated in the optical domain, and optical triggering of GaN HEMT structures by cost-effective and high-power longwavelength light sources is proposed for the first time.
Journal ArticleDOI
Ideal RESURF Geometries
Alessandro Ferrara,B. K. Boksteen,Raymond J. E. Hueting,Anco Heringa,Jurriaan Schmitz,Peter G. Steeneken +5 more
TL;DR: In this paper, a method to construct devices that obey Poisson's equation and satisfy the ideal RESURF condition giving zero slope in the drift extension along the current flow direction was presented.
References
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Book
Modern power devices
TL;DR: In this article, the authors introduce the concept of field effect transistors in the context of rectifier concepts and introduce a new Rectifier concept called Field Effect Transistor (FET) this article.
Journal ArticleDOI
Silicon-carbide high-voltage (400 V) Schottky barrier diodes
TL;DR: In this paper, the fabrication and characteristics of the first high-voltage (400-V) silicon-carbide (6H-SiC) Schottky barrier diodes are described.
Journal ArticleDOI
Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
TL;DR: In this paper, hole impact ionization coefficients have been accurately measured as a function of temperature in both 4H and 6H-SiC using the pulsed electron beam induced current (P-EBIC) technique.
Journal ArticleDOI
Evolution of MOS-bipolar power semiconductor technology
TL;DR: A review of the evolution of a power transistor technology based on MOS gate control is provided in this article, which offers the advantage of very high input impedance, which allows the control of the devices using low-cost integrated circuits.