BookDOI
Fundamentals of Power Semiconductor Devices
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In this article, the fundamental physics of power semiconductor devices are discussed and an analytical model for explaining the operation of all power Semiconductor devices is presented, focusing on silicon devices.Abstract:
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devicesandincludes the unique attributes and design requirements for emerging silicon carbide devices.read more
Citations
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Journal ArticleDOI
Effect of Bandgap Narrowing on Performance of Modern Power Devices
Gianluca Camuso,Ettore Napoli,V. Pathirana,Nishad Udugampola,Alice Pei-Shan Hsieh,Tanya Trajkovic,Florin Udrea +6 more
TL;DR: In this paper, the effect of bandgap narrowing on performance of power devices is investigated in detail, and it is shown that the change in the energy band structure caused by BGN can strongly affect the conductivity modulation of the bipolar devices resulting in a completely different performance.
Journal ArticleDOI
Dynamic Avalanche Limit and Current Filamentation Onset Limit in 4H-Silicon Carbide High-Voltage Diodes
TL;DR: In this paper , the authors investigated the safe operating area (SOA) limits of high-power bipolar devices with different current levels, di/dt, and temperatures for high-voltage devices (e.g., 20kV class).
Journal ArticleDOI
An algorithm to design floating field rings in SiC and Si power diodes and MOSFETs
TL;DR: In this article, a systematic procedure for deriving the number and spacing of the floating field rings (FFRs) of any ring length required for achieving an arbitrary breakdown voltage was proposed.
Journal ArticleDOI
Characterization of insulated-gate bipolar transistor temperature on insulating, heat-spreading polycrystalline diamond substrate
Hitoshi Umezawa,Shinichi Shikata,Yukako Kato,Yoshiaki Mokuno,Akinori Seki,Hiroshi Suzuki,Takeshi Bessho +6 more
TL;DR: In this article, a diamond DBA module was characterized by Raman spectroscopy and showed a high thermal conductivity of more than 1800 W m−1 K−1 and low leakage current, even at an applied bias of 3 kV, because of the suppression of electrical conduction through the grain boundaries.
Proceedings ArticleDOI
Adopting the BSIM3 Model to Describe the DC-IV Characteristics of a Vertical Power MOSFET
Lixi Yan,Ingmar Kallfass +1 more
TL;DR: This work presents the development of a general model translation approach, which aims at modeling and simulation of power MOSFET devices, using a sub-circuit based on the industry standard CMOS model BSIM3 to represent the performance ofpower MOSfETs.
References
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Book
Modern power devices
TL;DR: In this article, the authors introduce the concept of field effect transistors in the context of rectifier concepts and introduce a new Rectifier concept called Field Effect Transistor (FET) this article.
Journal ArticleDOI
Silicon-carbide high-voltage (400 V) Schottky barrier diodes
TL;DR: In this paper, the fabrication and characteristics of the first high-voltage (400-V) silicon-carbide (6H-SiC) Schottky barrier diodes are described.
Journal ArticleDOI
Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
TL;DR: In this paper, hole impact ionization coefficients have been accurately measured as a function of temperature in both 4H and 6H-SiC using the pulsed electron beam induced current (P-EBIC) technique.
Journal ArticleDOI
Evolution of MOS-bipolar power semiconductor technology
TL;DR: A review of the evolution of a power transistor technology based on MOS gate control is provided in this article, which offers the advantage of very high input impedance, which allows the control of the devices using low-cost integrated circuits.